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Laser melting of GaAs covered with thin metal layers

  • Surfaces and Multilayers
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Abstract

GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm2 for nude GaAs surface and slightly below 0.25 J/cm2 for GaAs covered with a 120 Å tin layer are predicted in reasonable agreement with experimental results.

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Authors and Affiliations

  1. Laboratorio de Semiconductores, Dpto. de Fisica Aplicada, Universidad Autónoma de Madrid, Cantoblanco, E-28049, Madrid, Spain

    B. J. Garcia, J. Martinez & J. Piqueras

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  1. B. J. Garcia
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  2. J. Martinez
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  3. J. Piqueras
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Garcia, B.J., Martinez, J. & Piqueras, J. Laser melting of GaAs covered with thin metal layers. Appl. Phys. A 51, 437–445 (1990). https://doi.org/10.1007/BF00348387

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