Abstract
A new relaxation time distribution has been developed for double arc Cole-Cole plots in order to study the dispersion relation of InP-oxide. As suggested by a carrier injection model, the low frequency dispersion most likely originates from remaining In at the interface. The presence of In is a direct consequence of the Al electrode formation where the vapor-deposited electrode reacts with the InPO4.
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B. Bouchikhi, C. Michel, G. Valmont, S. Ravelet, B. Lepley: Semicond. Sci. Technol. 1, 143 (1986)
G. Weimann: Thin Solid Films 56, 173 (1979)
S.N. Al-Refaie: Appl. Phys. A 48, 575 (1989)
K.S. Cole, R.H. Cole: J. Chem. Phys. 9, 341 (1941)
R.M. Fuoss, J.G. Kirkwood: J. Am. Chem. Soc. 63, 385 (1941)
S.N. Al-Refaie: Jpn. J. Appl. Phys. 27, 273 (1988)
M. Fathipour, W.J. Makky, J. McLaren, K.M. Geib, C.W. Wilmsen: J. Vac. Sci. Technol. A 1, 662 (1983)
F.A. Grant: J. Appl. Phys. 29, 76 (1958)
J.R. Waldrop, S.P. Kowalczyk, R.W. Grant: Appl. Phys. Lett. 42, 454 (1983)
F.P. Heiman, G. Warfield: IEEE Trans. ED-12, 167 (1965)
P. Schnupp: Solid-State Electron. 10, 785 (1967)
H. Prier: Appl. Phys. Lett. 10, 361 (1967)
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Al-Refaie, S.N. Investigation of the low frequency dispersion of InP-oxide using a new Cole-Cole double-arc distribution. Appl. Phys. A 51, 419–422 (1990). https://doi.org/10.1007/BF00348383
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DOI: https://doi.org/10.1007/BF00348383