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Light-intensity dependence of slow-relaxation phenomena in semi-insulating GaAs

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Abstract

Quenching-only and quenching-enhancement phenomena in low-temperature photoconductivity (PC) of SI GaAs have been studied as a function of light intensity for photons in 1.0–1.2 eV energy range. Quenching-only of PC occurs only at high light intensities (above 1014 photons/cm2 s) and reflects well-known bleaching of EL2 defects. On the contrary, the quenching-enhancement effect can be observed only for several orders of magnitude lower light intensities and neither the quenching nor the enhancement part of low-temperature evolution of PC is directly connected with EL2 defects, but reflects the time evolution of the occupancy of deep traps other than EL2. It was also found that bleaching of EL2 is quite an unefficient process.

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Authors and Affiliations

  1. R. Bošković Institute, P.O. Box 1016, YU-41001, Zagreb, Yugoslavia

    U. V. Desnica, Dunja I. Desnica & B. Šantić

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  1. U. V. Desnica
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  2. Dunja I. Desnica
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  3. B. Šantić
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Desnica, U.V., Desnica, D.I. & Šantić, B. Light-intensity dependence of slow-relaxation phenomena in semi-insulating GaAs. Appl. Phys. A 51, 379–381 (1990). https://doi.org/10.1007/BF00348376

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