Abstract
Stripes of gold metal were deposited by focussing an Ar+ laser (514nm) onto glass substrates in a heated vacuum cell containing the evaporator and the precursor. MeAuPMe3, Me3AuPR3 (R = Me,Et) were used as precursors. Using MeAuPMe3 or Me3AuPEt3, deposits of high quality were obtained above 40° C and 60° C evaporator temperature, respectively. With Me3AuPMe3 the same deposits of gold stripes were possible near room temperature. The stripes were characterized by scanning profilometry, electrical resistivity, SEM and SAM measurements. In general, the stripe resistivity was between 1.5 and 7 times of the bulk metal.
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