Abstract
Electrical resistivity measurements are tested as a sensitive probe of the crystallization processes in amorphous metallic alloys of Ni78Si7B15, rendering the determination of nucleation rates at the surface and in bulk. It is shown that the increase in the electrical resistivity just below the crystallization temperature is mainly due to nucleation phenomena. Moreover, the Avrami coefficient, calculated from resistivity data, provides information about types of crystallization mechanisms, dimensionality of the crystallite growth and the sequence of crystallization stages.
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Pçekała, K., Jaśkiewicz, P., Oleszak, D. et al. Surface and bulk crystallization of amorphous alloys Ni-Si-B probed by electrical resistivity. Appl. Phys. A 55, 148–153 (1992). https://doi.org/10.1007/BF00334214
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DOI: https://doi.org/10.1007/BF00334214