Abstract
We use the transient ion drift in a depletion region of a Schottky barrier to determine ion diffusivities at moderate temperatures. The pulsed reverse bias leads to temperature dependent capacitance transients similar to deep level carrier emission transients. A simple theoretical model together with classical transient signal analysis provide the means to extract the ion diffusion constant. When applied to copper in silicon, diffusion data are obtained in a not yet investigated temperature range (280–400 K) which agree well with both low and high temperature diffusion data.
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References
E.R. Weber: Appl. Phys. A 30, 1 (1983)
T. Prescha, T. Zundel, J. Weber: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner, E-MRS Symp. Proc. (North-Holland, Amsterdam 1989) p. 79
A. Mesli, T. Heiser: Phys. Rev. B 45, 11632 (1992)
M.D. De Coteau, P.R. Wilshaw, R. Falster: Mater. Sci. Forum 83–87, 185 (1992)
A. Mesli, T. Heiser, E. Mulheim: to be published
R.H. Hall, J.H. Racette: J. Appl. Phys. 35, 379 (1964)
C.M. Osburn, S.I. Raider: J. Electrochem. Soc. 120, 1369 (1973)
M. Marciniak: J. Electrochem. Soc. 124, 740 (1976)
D.V. Lang: In Thermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics in Appl. Phys., Vol. 37 (Springer, Berlin, Heidelberg 1979) p. 93
Unpublished results
P. Baruch: J. Appl. Phys. 32, 653 (1961)
R.M. Fuoss: Trans. Faraday Soc. 30, 967 (1934)
H. Reiss, C.S. Fuller, F.J. Morin: Bell Syst. Tech. J. 35, 535 (1956)
K. Weisser: Phys. Rev. 126, 1427 (1962)