Abstract
We report a method to increase the photorefractive two-wave mixing gain coefficient Γ in semiconductors by using additional incident laser radiation. Two auxiliary beams are used to optimize the spatial distribution of an applied electrical field via modulation of the photoconductivity of the sample. By applying a voltage of 3.5 kV on a 4.3 mm thick InP:Fe crystal we obtain a two-wave mixing gain of 9 cm−1. This is about 50% larger than that obtained without auxiliary beams.
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