Abstract
Ion-induced electron emission from solid surfaces is studied using a beam of caesium ions. Features of the spectra obtained during depth profiling of layered structures suggest a novel technique for investigating ion-induced Auger processes. Depth profiles are presented in terms of measured secondary ion signals, electron-induced Auger emission, and the intensities of features in the ion-induced electron spectra. It is shown that changes in features of the ion-induced electron spectra can be related to changes of chemical composition and sputtering probability. These help in the interpretation of variations in secondary-ion yields with matrix composition during depth profiling.
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References
H.D. Hagstrum: Phys. Rev. 150, 495 (1966); J. Vac. Sci. Technol. 12, 7 (1975)
D.J. Fabian: In Soft X-Ray Band Spectra and Electronic Structure, ed. by D.J. Fabian (Academic, New York 1968) p. 215
(RBS) L.C. Feldman, J.W. Mayer: Fundamentals of Surface and Thin Film Analysis (Elsevier, Amsterdam 1986)
(SIMS) A. Benninghoven, F.G. Rüdenauer, H.W. Werner: Secondary Ion Mass Spectrometry (Wiley, New York 1987)
R.A. Baragiola, E.V. Alonso, A. Oliva-Florio: Phys. Rev. B 19, 121 (1979)
E.V. Alonso, R.A. Baragiola, J. Ferron, M.M. Jakas, A. Oliva-Florio: Phys. Rev. B 2, 80 (1980)
Ming L. Yu: Nucl. Instrum. Meth. B 18, 542 (1987)
K. Wittmaack: In Inelastic Ion-Surface Collisions, ed. by N.H. Tolk, J.C. Tully, W. Heiland, C.W. White (Academic, New York 1977) p. 153
Ming L. Yu, N.D. Lang: Nucl. Instrum. Meth. B 14, 403 (1986)
V.T. Cherepin, S.P. Chenakin, I.N. Dubinsky: In SIMS IV, ed. by A. Benninghoven, A.M. Huber, H.W. Werner (Wiley, New York 1988) p. 197
H.D. Hagstrum: Phys. Rev. 96, 336 (1954)
B.A. Brasilovsky: Appl. Phys. A 50, 111 (1990)
M. Barat, W. Lichten: Phys. Rev. A 6, 211 (1972)
E.A. Maydell, R.H. Milne, H. Bolouri, D.J. Fabian: Submitted to J. Phys. E: Scientific Instruments
A.R. Bayly, M. Cummings, P. Vohralik, K. Williams, D.R. Kingham, A.R. Waugh, J.M. Walls: In SIMS, VI. ed. by A. Benninghoven, A.M. Huber, H.W. Werner (Wiley, New York 1988) p. 69
W.A. Metz, K.O. Legg, E.W. Thomas: J. Apl. Phys. 51, 2888 (1980)
R. Whaley, E.W. Thomas: J. Appl. Phys. 56, 1505 (1984)
G. Zampieri, R. Baragiola: Phys. Rev. B 29, 1480 (1984)
R.H. Milne, D.J. Fabian: Appl. Phys. A (in press)
N.D. Lang, J.K. Norskov: Phys. Scripta T 16, 15 (1983)
Z. Sroubek: Appl. Phys. Lett. 45, 849 (1984)
J.F. Hennequin: J. de Phys. 29, 1053 (1968)
P.G. Blauner, R.A. Weller: Phys. Rev. B 35, 1485, 1492 (1987)
H.D. Hagstrum: Phys. Rev. 104, 317 (1956)
F. Louchet, L. Viel, C. Benazeth, B. Fayot, N. Colombie: Radiat. Eff. 14, 123 (1972)
M.P. Seah, W.A. Dench: Surface Interface Anal. 1, 2 (1979)