Abstract
In-depth stress distribution GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si (001) has been studied by X-ray diffraction, photoluminescence and Raman spectroscopy. In order to determine the stress state at different distances to the interface GaAs/Si, layers of different thickness were prepared by chemical etching of the grown samples. We observe a non-uniform residual strain distribution through the GaAs on Si epilayer. Residual strain of thermal origin is larger in the highly defective region (∼ 0.4 μm) near the GaAs/Si interface where we have found a non-elastic relation between measured in-plane (a ‖) and in growth direction (a ⊥) lattice parameters. However, thermal strain is partially relaxed by formation of 107 cm−2 dislocations in the region of better crystalline quality near the external surface.
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S. Nishi, H. Inomata, M. Akiyama: Jpn. J. Appl. Phys. 24, L391 (1985)
F. Briones, L. González, A. Ruiz: Appl. Phys. A 49, 729 (1989)
S. Adachi, X. Oe: J. Electrochem. Soc. 131, 126 (1984)
A.T. Macrander, G.P. Schwartz, G.J. Gualtier: J. Appl. Phys. 64, 6733 (1988)
L. Tapfer, J.R. Martínez, K. Ploog: Semicond. Sci. Technol. 4, 617 (1989)
A. Freundlich, H. Kamada, G. Neu, B. Gil: Phys. Rev. B 40, 1652 (1989)
S. Zenon, J. Lee, G. Lambert: J. Appl. Phys. 65, 4382 (1989)
G. Bernier, J. Beerens, J. De Boeck, K, Deneffe, C. van Hoff, G. Berghs: Solid State Commun. 69, 727 (1989)
H. Asai, K. Oe: J. Appl. Phys. 54, 2052 (1983)
M. Chandrasekar, F.H. Pollak: Phys. Rev. B 15, 2127 (1977)
S.K. Chandhi, J.E. Ayers: Appl. Phys. Lett 53, 1204 (1988)
W. Stolz. F.E.G. Guimaraes, K. Ploog: J. Appl. Phys. 63, 492 (1988)
F.N.R. Nabarro: Theory of Crystal Dislocations (Oxford Univ. Press, London 1967)
I.K. Schuller, A. Fartosh, M. Grimsditch: MRS Bulletin, 33–37 (October 1990)
S.R. Phillpot, D. Wold, S. Yip: MRS Bulletin, 38–45 (October 1990)
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González, Y., Mazuelas, A., Recio, M. et al. Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si. Appl. Phys. A 53, 260–264 (1991). https://doi.org/10.1007/BF00324262
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DOI: https://doi.org/10.1007/BF00324262