Abstract
The dependence of the bandstructure and the resulting dependences of the intensity and the wavelength of stimulated emission on the carrier density are demonstrated in optically excited Al x Ga1−x As near the crossover composition x c at room temperature. Density induced Γ to L and Γ to X crossings, based on the large band-gap renormalization near the crossover composition, are observed in samples with an AlAs mole fraction x=0.43 and x=0.46. The band crossings are indicated by strong fluctuations of the intensity and the wavelength of stimulated emission. This behavior is quantitatively well explained by using a multi-valley model for the description of the band-gap renormalization. The multi-valley model leads to an exact density-dependent prediction of the wavelength and to an estimation of the intensity of stimulated emission in indirect band-gap Al x Ga1−x As and shows the optimum AlAs mole fraction for semiconductor laser application.
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