Abstract
Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3–1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30–70 kW/cm2.
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ACKNOWLEDGMENTS
This study was supported by the Russian Science Foundation (project no. 14-12-00644) on the equipment of the Unique Stand “Femtospectrum” of the Shared Service Center of the Institute for Physics of Microstructures of the Russian Academy of Sciences.
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Kudryatvsev, K.E., Dubinov, A.A., Aleshkin, V.Y. et al. Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates. Semiconductors 52, 1495–1499 (2018). https://doi.org/10.1134/S1063782618110143
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DOI: https://doi.org/10.1134/S1063782618110143