Abstract
A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms has been investigated. On the basis of the trapping of photo-excited carriers into two deep levels of gold atoms, a model for the occurrence of transient negative photoconductivity is proposed and related qualitatively to some experimental results.
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T. Kurosu, H. Yasuda, Y. Akiba, M. Iida, I. Choe: Appl. Phys. A 43, 205–208 (1987)
N.A. Stolwijk, B. Schuster, J. Holzl, H. Mehrer, W. Frank: Phys. Rev. 116B, 335–342 (1983)
U. Gösele, F. Morehead, W. Frank, A. Seeger: Appl. Phys. Lett. 38, 157–159 (1981)
C.M. Penchina, J.S. Moore, N. Holonyak, Jr.: Phys. Rev. 143, 634–636 (1966)
Yu.A. Bykovskii, K.N. Vinogradov, V.V. Zuev, Y.P. Kozyrev: Sov. Phys.-Semicond. 3, 933–934 (1970)
Yu.A. Bykovskii, K.N. Vinogradov, V.V. Zuev: Sov. Phys.-Semicond. 3, 935–936 (1970)
A.A. Lebedev, A.T. Mamadalimov, N.A. Sultanov: Sov. Phys.-Semicond. 5, 773–775 (1971)
C.T. Sah, L. Forbes, L.I. Rosier, A.F. Tasch, Jr., A.B. Tole: Appl. Phys. Lett. 15, 145–148 (1969)
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Kimura, H., Kurosu, T., Akiba, Y. et al. A model for the occurrence of transient negative photoconductivity in silicon doped with gold. Appl. Phys. A 53, 194–197 (1991). https://doi.org/10.1007/BF00324250
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DOI: https://doi.org/10.1007/BF00324250