Abstract
Contactless in-situ measurements of the microwave detected transient photoconductivity during growth of intrinsic a-Si:H films by plasma enhanced chemical vapour deposition are presented. It is shown, that these measurements can be performed without perturbation of the deposition process. The growth of a-Si:H films at 250° C and 120° C substrate temperature is studied and the information obtained from these measurements is discussed. In-situ characterization during growth of a multilayer structure with films deposited subsequently at 120° C, 250° C and again at 120° C is shown.
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Neitzert, H.C., Kunst, M. Microwave detected transient photoconductivity measurements during plasma deposition of intrinsic hydrogenated amorphous silicon. Appl. Phys. A 55, 378–386 (1992). https://doi.org/10.1007/BF00324088
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DOI: https://doi.org/10.1007/BF00324088