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Modeling of electron tunneling times in asymmetric double quantum wells

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Abstract

A scattering process modeled by an imaginary potential V I in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V I ∼ −5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.

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Yong-Zhen, H., Chi-Ming, W. Modeling of electron tunneling times in asymmetric double quantum wells. Appl. Phys. A 54, 308–310 (1992). https://doi.org/10.1007/BF00323856

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