Abstract
Three-micrometer-thick tin and lead films were irradiated at temperatures below 7.2K with 25-MeV oxygen ions. The radiation-induced residual resistivity δ ϱB , superconducting critical temperature T c , and transition width T φ were measured as a function of dose and subsequent thermal annealing. For tin it is found that T c is mainly a function of δ ϱB with the detailed nature of the defects being of minor importance. Quantitative agreement with theory is obtained considering two effects: an enhancement of the isotropic part of the electron-phonon interaction and a smearing out of its anisotropic part with decreasing mean free path of the electrons. For lead the change of T c depends on the defect configuration and it is shown that dislocation loops produce a significant T c increase. A possible phonon contribution to T c due to different vibrational modes of the radiation-induced defects and the host is discussed.
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This work received financial support from the Bundesministerium für Forschung and Technologie.
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Klaumünzer, S., Ischenko, G., Adrian, H. et al. Superconducting critical temperature in disordered tin and lead. J Low Temp Phys 36, 89–107 (1979). https://doi.org/10.1007/BF00174914
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DOI: https://doi.org/10.1007/BF00174914