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Modified metal-insulator-metal (M-I-M) hydrogen gas sensors based on zinc oxide

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Abstract

Zinc oxide thin films (thickness ~0.6 Μm) were deposited on zinc substrates by the spray-CVD method and a new kind of sensor structure Pd/ZnO/Zn was fabricated for hydrogen detection. The sensor was exposed to air mixed with different concentrations of H2 (2000–20 000 ppm) and showed high sensitivity and a short time response at room temperature. The recovery time of the sensor to the zero base level was found to be faster after exposure to higher hydrogen concentrations. The sensitivity was bias-dependent with best performance at 0.05 V. Because of the key role of sensing played by the adsorption and desorption processes at the Pd surface and the Pd/ZnO interface, the contact resistance at the Pd/ZnO interface changed reversibly. The sensor showed high selectivity to hydrogen at room temperature and was insensitive to CO, CO2 and LPG even at higher concentrations.

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Authors and Affiliations

  1. Semi conductor Materials Preparation and Processing Laboratory, Materials Science Centre, I.I.T, 721302, Kharagpur, India

    A. Dutta & S. Basu

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  1. A. Dutta
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  2. S. Basu
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Dutta, A., Basu, S. Modified metal-insulator-metal (M-I-M) hydrogen gas sensors based on zinc oxide. J Mater Sci: Mater Electron 6, 415–418 (1995). https://doi.org/10.1007/BF00144644

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  • DOI: https://doi.org/10.1007/BF00144644

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