Abstract
Ternary silver antimony telluride (AgxSb1−xTey) thin films with tailored compositions were synthesized by a cationic exchange reaction of thermally evaporated antimony telluride thin films, as a simple and costeffective approach. The composition of AgxSb1−xTey thin films was controlled by the reaction time. Temperaturedependent electrical properties of the AgxSb1−xTey thin films demonstrated phase transition behavior from 323 K to 343 K. The composition-dependent thermoelectric properties (i.e., electrical resistivity (ρ), Seebeck coefficient (S) and power factor (S2ρ)) of the as-deposited Sb54Te46, the transformed AgxSb1−xTey and the annealed AgxSb1−xTey thin films were investigated as a function of temperature.
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W. Heng, L. Jing-Feng, Z. Minmin, and S. Tao, Appl. Phys. Lett. 93, 202106 (2008).
E. F. Hockings, J. Phys. Chem. Sol. 10, 341 (1959).
V. Jovovic and J. Heremans, J. Elec. Mater. 38, 1504 (2009).
D. T. Morelli, V. Jovovic, and J. P. Heremans, Phys. Rev. Lett. 101, 035901 (2008).
T. Su, X. Jia, H. Ma, F. Yu, Y. Tian, G. Zuo, Y. Zheng, Y. Jiang, D. Dong, L. Deng, B. Qin, and S. Zheng, J. Appl. Phys. 105, 073713 (2009).
T. Su, X. Jia, H. Ma, L. Zhou, J. Guo, and N. Dong, Phys. Lett. A, 372, 515 (2008).
B. K. Min, B. S. Kim, I. H. Kim, J. K. Lee, M. H. Kim, M. W. Oh, S. D. Park, and H. W. Lee, Electron. Mater. Lett. 7, 255 (2011)
K. Wojciechowski, J. Tobola, M. Schmidt, and R. Zybala, J. Phys. Chem. Sol. 69, 2748 (2008).
S. N. Zhang, T. J. Zhu, S. H. Yang, C. Yu, and X. B. Zhao, Acta Mater. 58, 4160 (2010).
J. P. Heremans, V. Jovovic, E. S. Toberer, A. Saramat, K. Kurosaki, A. Charoenphakdee, S. Yamanaka, and G. J. Snyder, Science, 321, 554 (2008).
K. F. Hsu, S. Loo, F. Guo, W. Chen, J. S. Dyck, C. Uher, T. Hogan, E. K. Polychroniadis, and M. G. Kanatzidis, Science, 303, 818 (2004).
G. J. Snyder and E. S. Toberer, Nature Mater. 7, 105 (2008).
D. M. Rowe, CRC Handbook of Thermoelectrics, Boca Raton, CRC Press, Inc. (1995).
B. Kim, I. Kim, J. Lee, B. Min, M. Oh, S. Park, H. Lee, and M. Kim, Electron. Mater. Lett. 6, 181 (2010).
J. D. Sugar and D. L. Medlin, J. Alloys Comp. 478, 75 (2009).
B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, B. Yu, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M. S. Dresselhaus, G. Chen, and Z. Ren, Science, 320, 634 (2008).
J. M. O. Zide, D. Vashaee, Z. X. Bian, G. Zeng, J. E. Bowers, A. Shakouri, and A. C. Gossard, Phys. Rev. B, 74, 205335 (2006).
J. Martin, L. Wang, L. Chen, and G. S. Nolas, Phys. Rev. B, 79, 115311 (2009).
D. Vashaee and A. Shakouri, Phys. Rev. Lett. 92, 106103 (2004).
Y. S. Park, S. Y. Lee, S. M. Yoon, S. W. Jung, B. G. Yu, S. J. Lee, and S. G. Yoon, Appl. Phys. Lett. 91, 162107 (2007).
M. L. Lee, L. P. Shi, Y. T. Tian, C. L. Gan, and X. S. Miao, phys. Stat. Sol. (a), 205, 340 (2008).
M. Wuttig and N. Yamada, Nat. Mater. 6, 824 (2007).
M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters, Nat. Mater. 4, 347 (2005).
D. Yu, S. Brittman, J. S. Lee, A. L. Falk, and H. Park, Nano Lett. 8, 3429 (2008).
C. Frei, J. Schenzel, F. Waibel, and D. Gunther, J. Anal. Atom. Spectrom. 23, 217 (2008).
G. D. Moon, S. Ko, Y. Xia, and U. Jeong, ACS Nano 4, 2307 (2010).
U. Jeong, P. H. C. Camargo, Y. H. Lee, and Y. Xia, J. Mater. Chem. 16, 3893 (2006).
B. Zhang, Y. Jung, H.-S. Chung, L. V. Vugt, and R. Agarwal, Nano Lett. 10, 149 (2009).
S. E. Wark, C.-H. Hsia, and D. H. Son, J. Am. Chem. Soc. 130, 9550 (2008).
S. K. Mishra, S. Satpathy, and O. Jepsen, J. Phys.: Condensed Matter 9, 461 (1997).
H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, Nat. Phys. 5, 438 (2009).
R. Detemple, D. Wamwangi, M. Wuttig, and G. Bihlmayer, Appl. Phys. Lett. 83, 2572 (2003).
V. Jovovic and J. P. Heremans, Phys. Rev. B 77, 245204 (2008).
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Jung, H., Park, H., Choa, Y. et al. Invited paper: Composition-dependent electrical properties of ternary AgxSb1−xTey thin films synthesized by cationic exchange reaction. Electron. Mater. Lett. 8, 219–224 (2012). https://doi.org/10.1007/s13391-012-2041-y
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DOI: https://doi.org/10.1007/s13391-012-2041-y