Abstract
Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore era. However, optoelectronic devices based on transition metal dichalcogenides (TMDs) are limited to their poor mobilities and weak light-matter interactions, which still hardly exhibit superior device performances in the application of artificial synapses. Here, we demonstrate the successful fabrication of Au nanoparticle-coupled MoS2 heterostructures via chemical vapor deposition (CVD), where the light absorption of MoS2 is greatly enhanced and engineered by plasmonic effects. Hot electrons are excited from Au nanoparticles, and then injected into MoS2 semiconductors under the light illumination. The plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors, especially in ultra-sensitive excitatory postsynaptic current (EPSC, 9.6 × 10−3 nA@3.4 nW·cm−2), ultralow energy consumption (34.7 pJ), long-state retention time (> 1,000 s), and tunable synaptic plasticity transitions. The material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses, which may lead the future development of neuromorphic electronics in optical information sensing and learning.
Similar content being viewed by others
References
Dai, S. L.; Zhao, Y. W.; Wang, Y.; Zhang, J. Y.; Fang, L.; Jin, S.; Shao, Y. L.; Huang, J. Recent advances in transistor-based artificial synapses. Adv. Funct. Mater. 2019, 29, 1903700.
Kim, S. G.; Han, J. S.; Kim, H.; Kim, S. Y.; Jang, H. W. Recent advances in memristive materials for artificial synapses. Adv. Mater. Technol. 2018, 3, 1800457.
Ohno, T.; Hasegawa, T.; Tsuruoka, T.; Terabe, K.; Gimzewski, J. K.; Aono, M. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat. Mater. 2011, 10, 591–595.
Danesh, C. D.; Shaffer, C. M.; Nathan, D.; Shenoy, R.; Tudor, A.; Tadayon, M.; Lin, Y.; Chen, Y. Synaptic resistors for concurrent inference and learning with high energy efficiency. Adv. Mater. 2019, 31, 1808032.
Zhong, Y. N.; Wang, T.; Gao, X.; Xu, J. L.; Wang, S. D. Synapselike organic thin film memristors. Adv. Funct. Mater. 2018, 28, 1800854.
Seo, S.; Lee, J. J.; Lee, H. J.; Lee, H. W.; Oh, S.; Lee, J. J.; Heo, K.; Park, J. H. Recent progress in artificial synapses based on two-dimensional van der Waals materials for brain-inspired computing. ACS Appl. Electron. Mater. 2020, 2, 371–388.
Han, H.; Yu, H. Y.; Wei, H. H.; Gong, J. D.; Xu, W. T. Recent progress in three-terminal artificial synapses: From device to system. Small 2019, 15, 1900695.
Han, H.; Xu, Z. P.; Guo, K. X.; Ni, Y.; Ma, M. X.; Yu, H. Y.; Wei, H. H.; Gong, J. D.; Zhang, S.; Xu, W. T. Tunable synaptic plasticity in crystallized conjugated polymer nanowire artificial synapses. Adv. Intell. Syst. 2020, 2, 1900176.
Sangwan, V. K.; Hersam, M. C. Neuromorphic nanoelectronic materials. Nat. Nanotechnol. 2020, 15, 517–528.
Zheng, W. S.; Xie, T.; Zhou, Y.; Chen, Y. L.; Jiang, W.; Zhao, S. L.; Wu, J. X.; Jing, Y. M.; Wu, Y.; Chen, G. C. et al. Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors. Nat. Commun. 2015, 6, 6972.
Zhou, Y.; Wu, D.; Zhu, Y. H.; Cho, Y.; He, Q.; Yang, X.; Herrera, K.; Chu, Z. D.; Han, Y.; Downer, M. C. et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett. 2017, 17, 5508–5513.
Li, F.; Feng, Y. X.; Li, Z. W.; Ma, C.; Qu, J. Y.; Wu, X. P.; Li, D.; Zhang, X. H.; Yang, T. F.; He, Y. Q. et al. Rational kinetics control toward universal growth of 2D vertically stacked heterostructures. Adv. Mater. 2019, 31, 1901351.
Liang, S. J.; Cheng, B.; Cui, X. Y.; Miao, F. Van der Waals heterostructures for high-performance device applications: Challenges and opportunities. Adv. Mater. 2020, 32, 1903800.
Li, Z. W.; Xu, B. Y.; Liang, D. L.; Pan, A. L. Polarization-dependent optical properties and optoelectronic devices of 2D materials. Research 2020, 2020, 5464258.
Duan, X. D.; Wang, C.; Pan, A. L.; Yu, R. Q.; Duan, X. F. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: Opportunities and challenges. Chem. Soc. Rev. 2015, 44, 8859–8876.
Jiang, J.; Hu, W. N.; Xie, D. D.; Yang, J. L.; He, J.; Gao, Y. L.; Wan, Q. 2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration. Nanoscale 2019, 11, 1360–1369.
Cheng, Y. C.; Li, H. J. W.; Liu, B.; Jiang, L. Y.; Liu, M.; Huang, H.; Yang, J. L.; He, J.; Jiang, J. Vertical 0D-perovskite/2D-MoS2 van der Waals heterojunction phototransistor for emulating photoelectric-synergistically classical pavlovian conditioning and neural coding dynamics. Small 2020, 16, 2005217.
Yi, S. G.; Park, M. U.; Kim, S. H.; Lee, C. J.; Kwon, J.; Lee, G. H.; Yoo, K. H. Artificial synaptic emulators based on MoS2 flash memory devices with double floating gates. ACS Appl. Mater. Interfaces 2018, 10, 31480–31487.
Zhu, J. D.; Yang, Y. C.; Jia, R. D.; Liang, Z. X.; Zhu, W.; Rehman, Z. U.; Bao, L.; Zhang, X. X.; Cai, Y. M.; Song, L. et al. Ion gated synaptic transistors based on 2D van der Waals crystals with tunable diffusive dynamics. Adv. Mater. 2018, 30, 1800195.
Du, J. Y.; Ge, C.; Riahi, H.; Guo, E. J.; He, M.; Wang, C.; Yang, G. Z.; Jin, K. J. Dual-gated MoS2 transistors for synaptic and programmable logic functions. Adv. Electron. Mater. 2020, 6, 1901408.
Luo, Z. D.; Xia, X.; Yang, M. M.; Wilson, N. R.; Gruverman, A.; Alexe, M. Artificial optoelectronic synapses based on ferroelectric field-effect enabled 2D transition metal dichalcogenide memristive transistors. ACS Nano 2020, 14, 746–754.
Zhang, M.; Fan, Z. H.; Jiang, X. X.; Zhu, H.; Chen, L.; Xia, Y. D.; Yin, J.; Liu, X. K.; Sun, Q. Q.; Zhang, D. W. MoS2-based charge-trapping synaptic device with electrical and optical modulated conductance. Nanophotonics 2020, 9, 2475–2486.
Islam, M. M.; Dev, D.; Krishnaprasad, A.; Tetard, L.; Roy, T. Optoelectronic synapse using monolayer MoS2 field effect transistors. Sci. Rep. 2020, 10, 21870.
Fan, X. F.; Zheng, W. T.; Singh, D. J. Light scattering and surface plasmons on small spherical particles. Light:Sci. Appl. 2014, 3, e179.
Li, Y.; Li, Z. W.; Chi, C.; Shan, H. Y.; Zheng, L. H.; Fang, Z. Y. Plasmonics of 2D nanomaterials: Properties and applications. Adv. Sci. 2017, 4, 1600430.
Li, Y.; Cain, J. D.; Hanson, E. D.; Murthy, A. A.; Hao, S. Q.; Shi, F. Y.; Li, Q. Q.; Wolverton, C.; Chen, X. Q.; Dravid, V. P. Au@MoS2 core-shell heterostructures with strong light-matter interactions. Nano Lett. 2016, 16, 7696–7702.
Wang, H.; Li, S. S.; Ai, R. Q.; Huang, H.; Shao, L.; Wang, J. F. Plasmonically enabled two-dimensional material-based optoelectronic devices. Nanoscale 2020, 12, 8095–8108.
Miao, J. S.; Hu, W. D.; Jing, Y. L.; Luo, W. J.; Liao, L.; Pan, A. L.; Wu, S. W.; Cheng, J. X.; Chen, X. S.; Lu, W. Surface plasmon-enhanced photodetection in few layer MoS2 phototransistors with Au nanostructure arrays. Small 2015, 11, 2392–2398.
Li, J. L.; Nie, C. B.; Sun, F. Y.; Tang, L. L.; Zhang, Z. J.; Zhang, J. D.; Zhao, Y.; Shen, J.; Feng, S. L.; Shi, H. F. et al. Enhancement of the photoresponse of monolayer MoS2 photodetectors induced by a nanoparticle grating. ACS Appl. Mater. Interfaces 2020, 12, 8429–8436.
He, Y. M.; Tang, P. Y.; Hu, Z. L.; He, Q. Y.; Zhu, C.; Wang, L. Q.; Zeng, Q. S.; Golani, P.; Gao, G. H.; Fu, W. et al. Engineering grain boundaries at the 2D limit for the hydrogen evolution reaction. Nat. Commun. 2020, 11, 57.
Fu, L.; Sun, Y. Y.; Wu, N.; Mendes, R. G.; Chen, L. F.; Xu, Z.; Zhang, T.; Rümmeli, M. H.; Rellinghaus, B.; Pohl, D. et al. Direct growth of MoS2/h-BN heterostructures via a sulfide-resistant alloy. ACS Nano 2016, 10, 2063–2070.
Gong, Y. J.; Lin, J. H.; Wang, X. L.; Shi, G.; Lei, S. D.; Lin, Z.; Zou, X. L.; Ye, G. L.; Vajtai, R.; Yakobson, B. I. et al. Vertical and inplane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135–1142.
Song, B. A.; He, K.; Yuan, Y. F.; Sharifi-Asl, S.; Cheng, M.; Lu, J.; Saidi, W. A.; Shahbazian-Yassar, R. In situ study of nucleation and growth dynamics of Au nanoparticles on MoS2 nanoflakes. Nanoscale 2018, 10, 15809–15818.
Bian, P. X.; Zhang, J. X.; Wang, J. Y.; Yang, J.; Wang, J. Y.; Liu, H. L.; Sun, Y. M.; Li, M. X.; Zhang, X. D. Enhanced catalysis of ultrasmall Au-MoS2 clusters against reactive oxygen species for radiation protection. Sci. Bull. 2018, 63, 925–934.
Wu, K.; Li, Z.; Tang, J. B.; Lv, X. L.; Wang, H. L.; Luo, R. C.; Liu, P.; Qian, L. H.; Zhang, S. P.; Yuan, S. L. Controllable defects implantation in MoS2 grown by chemical vapor deposition for photoluminescence enhancement. Nano Res. 2018, 11, 4123–4132.
Zhou, Y. Z.; Kiriya, D.; Haller, E. E.; Ager III, J. W.; Javey, A.; Chrzan, D. C. Compliant substrate epitaxy: Au on MoS2. Phys. Rev. B 2016, 93, 054106.
Li, Z. W.; Xiao, Y. D.; Gong, Y. J.; Wang, Z. P.; Kang, Y. M.; Zu, S.; Ajayan, P. M.; Nordlander, P.; Fang, Z. Y. Active light control of the MoS2 monolayer exciton binding energy. ACS Nano 2015, 9, 10158–10164.
Lee, C.; Yan, H.; Brus, L. E.; Heinz, T. F; Hone, J.; Ryu, S. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 2010, 4, 2695–2700.
Li, H.; Yin, Z. Y.; He, Q. Y.; Li, H.; Huang, X.; Lu, G.; Fam, D. W. H.; Tok, A. I. Y.; Zhang, Q.; Zhang, H. Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 2012, 8, 63–67.
Sreeprasad, T. S.; Nguyen, P.; Kim, N.; Berry, V. Controlled, defect-guided, metal-nanoparticle incorporation onto MoS2 via chemical and microwave routes: Electrical, thermal, and structural properties. Nano Lett. 2013, 13, 4434–4441.
Bang, S.; Duong, N. T.; Lee, J.; Cho, Y. H.; Oh, H. M.; Kim, H.; Yun, S. J.; Park, C.; Kwon, M. K.; Kim, J. Y. et al. Augmented quantum yield of a 2D monolayer photodetector by surface plasmon coupling. Nano Lett. 2018, 18, 2316–2323.
Lu, X.; Utama, M. I. B.; Lin, J.; Gong, X.; Zhang, J.; Zhao, Y. Y.; Pantelides, S. T.; Wang, J. X.; Dong, Z. L.; Liu, Z. et al. Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. Nano Lett. 2014, 14, 2419–2425.
Lopez-Sanchez, O.; Lembke, D.; Kayci, M.; Radenovic, A.; Kis, A. Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 2013, 8, 497–501.
Island, J. O.; Blanter, S. I.; Buscema, M.; van der Zant, H. S.; Castellanos-Gomez, A. Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors. Nano Lett. 2015, 15, 7853–7858.
Wu, H. L.; Kang, Z.; Zhang, Z. H.; Zhang, Z.; Si, H. N.; Liao, Q. L.; Zhang, S. C.; Wu, J.; Zhang, X. K.; Zhang, Y. Interfacial charge behavior modulation in perovskite quantum dot-monolayer MoS2 0D-2D mixed-dimensional van der Waals heterostructures. Adv. Funct. Mater. 2018, 28, 1802015.
Lv, Z. Y.; Chen, M.; Qian, F. S.; Roy, V. A. L.; Ye, W. B.; She, D. H.; Wang, Y.; Xu, Z. X.; Zhou, Y.; Han, S. T. Mimicking neuroplasticity in a hybrid biopolymer transistor by dual modes modulation. Adv. Funct. Mater. 2019, 29, 1902374.
Ahmed, T.; Kuriakose, S.; Mayes, E. L. H.; Ramanathan, R.; Bansal, V.; Bhaskaran, M.; Sriram, S.; Walia, S. Optically stimulated artificial synapse based on layered black phosphorus. Small 2019, 15, 1900966.
Liu, Y. H.; Zhu, L. Q.; Feng, P.; Shi, Y.; Wan, Q. Freestanding artificial synapses based on laterally proton-coupled transistors on chitosan membranes. Adv. Mater. 2015, 27, 5599–5604.
Wixted, J. T.; Carpenter, S. K. The wickelgren power law and the ebbinghaus savings function. Psychol. Sci. 2007, 18, 133–134.
Yang, C. D.; Qian, J.; Jiang, S.; Wang, H. Y.; Wang, Q. J.; Wan, Q.; Chan, P. K. L.; Shi, Y.; Li, Y. An optically modulated organic schottky-barrier planar-diode-based artificial synapse. Adv. Opt. Mater. 2020, 8, 2000153.
Li, Y.; DiStefano, J. G.; Murthy, A. A.; Cain, J. D.; Hanson, E. D.; Li, Q. Q.; Castro, F. C.; Chen, X. Q.; Dravid, V. P. Superior plasmonic photodetectors based on Au@MoS2 core-shell heterostructures. ACS Nano 2017, 11, 10321–10329.
Acknowledgements
We thank Prof. Feng Lin for his efforts on FDTD simulations. This work is supported by the National Natural Science Foundation of China (Nos. 92163135, 11904098, 51972105, U19A2090, and 62090035), Hunan Provincial Natural Science Foundation of China (No. 2019JJ30004), Key Program of the Hunan Provincial Science and Technology Department (Nos. 2019XK2001 and 2020XK2001). This work is also supported by State Key Laboratory of Artificial Microstructure & Mesoscopic Physics.
Author information
Authors and Affiliations
Corresponding authors
Electronic Supplementary Material
12274_2021_3875_MOESM1_ESM.pdf
Plasmonically engineered light-matter interactions in Au-nanoparticle/MoS2 heterostructures for artificial optoelectronic synapse
Rights and permissions
About this article
Cite this article
Luo, Z., Xie, Y., Li, Z. et al. Plasmonically engineered light-matter interactions in Au-nanoparticle/MoS2 heterostructures for artificial optoelectronic synapse. Nano Res. 15, 3539–3547 (2022). https://doi.org/10.1007/s12274-021-3875-0
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12274-021-3875-0