Abstract
Ge films were prepared at different deposition temperatures and ion source bias voltage using the electron beam evaporation. The infrared refractive index was obtained by spectral inversion. Results show that the refractive index becomes larger as the deposition temperature increases. The maximum refractive index at the wavelength of 4 000 nm is 4.274 with the deposition temperatures of 210 °C. The refractive index of film decreases first and then increases as the bias voltage increases. When the ion source bias voltage is 120 V, the refractive index of the film is the smallest. The difference in extinction coefficient of Ge films prepared by different process parameters is small.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R.Z. Moghadam, H. Ahmadvand and M. Jannesari, Infrared Physics & Technology 75, 18 (2016).
Peng Jie, Li Zi-quan, Liu Jing-song, Jiang Ming and Xu Qi, Journal of Materials Engineering 9, 32 (2014). (in Chinese)
Qi Dong, Wang Xian, Cheng Yong-zhi, Gong Rong-zhou and Li Bo-wen, Optical Materials 62, 52 (2016).
Wang Fang, Cheng Yong-zhi, Wang Xian, Qi Dong and Gong Rong-zhou, Optical Materials 75, 373 (2018).
A. Beltiukov, R. Valeev, E. Romanov and V. Mukhgalin, Physica Status Solidi (c) 11, 1452 (2014).
J.S. Jensen, T.L. Pedersen, R. Pereira, J. Chevallier, J. Hansen, B. Nielsen and A.N. Larsen, Applied Physics A: Materials Science & Processing 83, 41 (2006).
Yasutaka Uchida, Tomoko Funayama, Yoshiaki Kogure and Wenchang Yeh, Japanese Journal of Applied Physics 55, 031303 (2016).
Zhang Wei-gang, Xu Guo-yue, Shi Xiao, Ma Hui and Li Lei, Photonics and Nanostructures 14, 46 (2015).
Michel Lequime, Séverin Nadji, Dragan Stojcevski, Cihan Koc, Catherine Grézes-Besset and Julien Lumea, Applied Optics 56, 181 (2017).
Xu Ling-mao, Zhou Hui, Zhang Kai-feng, Zheng Jun, Li Kun and Wang Duo-shu, J. Infrared Millim. Waves 7, 11 (2018).
Tang Jin-fa, Gu Pei-fu, Liu Xu and Li Hai-feng, Modern Optical Thin Film Technology, Hangzhou: Zhejiang University Press, 2007.
Zhang Yin-hua, Zhang Ke-peng, Huang Wei and Xiong Sheng-ming, Optik 170, 321 (2018).
Li Kai-peng, Wang Duo-shu, Li Chen, Wang Ji-zhou, Dong Mao-jin and Zhang Ling, Infrared and Laser Engineering 44, 1048 (2015). (in Chinese)
Author information
Authors and Affiliations
Corresponding author
Additional information
This work has been supported by the Key Laboratory Fund of Lanzhou Institute of Physics (No.9140C540303130C54005).
Rights and permissions
About this article
Cite this article
Li, K., Xiong, Yq., Wang, H. et al. Effect of electron beam evaporation process parameters on infrared refractive index of Ge film. Optoelectron. Lett. 16, 298–302 (2020). https://doi.org/10.1007/s11801-020-9152-8
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11801-020-9152-8