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Effect of illumination on linear and nonlinear optical parameters of Ga5Se95 thin films

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Abstract

Ga5Se95 films were prepared by using thermal evaporation technique. X-ray showed that the powder samples as well as thin-film samples are crystalline in nature. The optical constants (refractive index n and rad absorption index k) of Ga5Se95 films were calculated using Murmann’s exact method. The photoinduced red shift of the optical gap (photodarkening) appeared in Ga5Se95 films after illumination. The indirect energy gap was decreased from 1.75 eV for the as-deposited films to 1.65 eV for illuminated thin films 1 h. The concentration of color centers was calculated by using Gaussian fitting for peaks of the absorption coefficient (α) and was found to increase from 5.6 × 1024 to 6.2 × 1024 cm−3 with illumination time. The effect of illumination on the nonlinear optical susceptibility (χ (3)) and nonlinear refractive index (n 2) is estimated using empirical relations.

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Authors and Affiliations

  1. Basic Sciences Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt

    I. T. Zedan

  2. Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt

    M. M. El-Nahass

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  1. I. T. Zedan
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  2. M. M. El-Nahass
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Correspondence to I. T. Zedan.

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Zedan, I.T., El-Nahass, M.M. Effect of illumination on linear and nonlinear optical parameters of Ga5Se95 thin films. Appl. Phys. A 120, 983–989 (2015). https://doi.org/10.1007/s00339-015-9266-1

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  • DOI: https://doi.org/10.1007/s00339-015-9266-1

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