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Competitive growth of Cu3Sn and Cu6Sn5 at Sn/Cu interface during various multi-reflow processes

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Abstract

The competitive growth of Cu3Sn and Cu6Sn5 in the multi-reflow processes induced by temperature, time, and cooling rate was systematically studied in this work. Results indicated that the thickness proportion of Cu3Sn in the IMC layer was highly promoted in the temperature-increased multi-reflow process and slightly increased with a fluctuation in the isothermal multi-reflow process, while obviously decreased in the temperature-decreased multi-reflow process. The proportion of Cu3Sn grew following the increase of reflow temperature, time, and cooling rate and the thickness of Cu3Sn formed at the central of the Cu6Sn5 bottom was higher than that formed at the edge. The results have a significant meaning in understanding and controlling the competitive growth of Cu3Sn and Cu6Sn5 and improving the reliability of solder joints.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 51871040).

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Authors and Affiliations

  1. School of Microelectronics, Dalian University of Technology, Dalian, 116024, China

    Haoran Ma

  2. School of Materials Science and Engineering, Dalian University of Technology, Dalian, 116024, China

    Min Shang, Chong Dong, Jinye Yao, Chen Wang, Haitao Ma & Yunpeng Wang

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  1. Min Shang
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  2. Chong Dong
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  3. Jinye Yao
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  4. Chen Wang
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  5. Haoran Ma
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  7. Yunpeng Wang
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Correspondence to Haoran Ma or Haitao Ma.

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Shang, M., Dong, C., Yao, J. et al. Competitive growth of Cu3Sn and Cu6Sn5 at Sn/Cu interface during various multi-reflow processes. J Mater Sci: Mater Electron 32, 22771–22779 (2021). https://doi.org/10.1007/s10854-021-06711-x

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