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Photovoltaic effect on the microelectronic properties of perylene/p-Si heterojunction devices

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Abstract

This paper presents the fabrication and study of light dependent electrical properties of heterojunction device based on small molecular semiconductor 3, 4, 9, 10-perylene tetracarboxylic anhydride (PTCDA). The Ag/PTCDA/P3HT/p-Si heterojunction device is prepared by spin coating a 20 nm layer of poly-3,hexylthiophene (P3HT) on p-Si followed by 80 nm thick film of PTCDA via thermal deposition. Current–voltage (I–V) properties of the device are measured at room temperature in dark condition ~ 20 lx (lx) and different illumination conditions to probe photovoltaic effects on the microelectronic parameters of the device. In dark, the Ag/PTCDA/P3HT/p-Si device exhibited rectifying behavior in the forward bias with a current rectification ratio (RR) of 1990 at ± 3.5 V that confirmed the formation of depletion region. Key microelectronic parameters of the device such as ideality factor (n), barrier height (φb), series resistance (Rs) and shunt resistance (Rsh) are extracted from the I–V characteristics and studied as a function of illumination (2–2700 lx). Charge conduction mechanism and mobility via interface of the device is also investigated from logI–logV curves and conventional I–V characteristics, respectively. The microelectronic properties of the device are correlated with optical properties (absorption spectrum) and morphology of the PTCDA thin films carried out by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transformed infrared (FTIR) spectrum and energy dispersive x-rays (EDX) is performed to validate composition and elemental analysis of PTCDA films.

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Acknowledgements

The authors are thankful to Abdul Wali Khan University Mardan, Higher Education Commission (HEC), Pakistan and Cavendish Lab, University of Cambridge, UK for providing the research facilities for morphology and UV–vis studies.

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Authors and Affiliations

  1. Department of Physics, Faculty of Physical and Numerical Sciences, Abdul Wali Khan University Mardan, Mardan, 23200, Pakistan

    Muhammad Tahir,  Muddusir & Sanila Gul

  2. Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603, Kuala Lumpur, Malaysia

    Muhammad Tahir & Suhana Mohd Said

  3. Higher Education Department, HED, Peshawar, Khyber Pakhtunkhwa, Pakistan

    Dil Nawaz Khan

  4. Department of Physics, Karakoram International University, Gilgit, 15100, Pakistan

    Fazal Wahab

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Tahir, M., Muddusir, Khan, D.N. et al. Photovoltaic effect on the microelectronic properties of perylene/p-Si heterojunction devices. J Mater Sci: Mater Electron 30, 19463–19470 (2019). https://doi.org/10.1007/s10854-019-02310-z

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