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Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM

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Abstract

[6,6]-Phenyl C61-butyric acid methyl ester (PCBM) is a good electron transport material and can be employed in optoelectronic application. To understand the effect of the amount ratio on the capacitive behaviors, the pristine ZnO, 3%, 5% and 10% amounts PCBM (low amount) added ZnO interfacial layered Al/ZnO:PCBM/p-Si heterojunction structures have been fabricated by sol–gel spin-coating method and characterized by X-ray diffraction (XRD), capacitance–voltage (C-V) and conductance-voltage (G-V) measurements for the frequency range between 10 kHz and 1 MHz. Some electrical parameters of the pristine ZnO and various PCBM added ZnO interlayered devices have been calculated from 1/C2-V (1/capacitance2-voltage) plots for various frequencies. Moreover, capacitance transient (C-t) and conductance-transient (G-t) measurements of the Al/ZnO:PCBM/p-Si devices have been performed for various light illumination intensities from 20 to 100 mW/cm2 with 20 mW/cm2 increments under light illumination which has whole spectral matching. The results revealed that PCBM amount has a great effect on capacitance and conductivity values of the Al/ZnO:PCBM/p-Si devices.

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This work was supported by Selcuk University BAP office with Project Number 19401034.

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Authors and Affiliations

  1. Department of Biotechnology, Faculty of Science, Selcuk University, 42130, Konya, Turkey

    Murat Yıldırım

  2. Department of Electronics and Automation, Vocational High School, Bilecik Şeyh Edebali University, 11000, Bilecik, Turkey

    Adem Kocyigit

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Conceptualization, M.Y.; methodology, M.Y. and A.K.; investigation, M.Y. and A.K.; writing—original draft preparation, M.Y. and A.K.; writing—review, supervision and editing, M.Y. and A.K. All authors have read and agreed to the published version of the manuscript.

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Yıldırım, M., Kocyigit, A. Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM. Appl. Phys. A 128, 700 (2022). https://doi.org/10.1007/s00339-022-05842-0

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