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Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices

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Abstract

In this work, hydrogenated gallium-doped zinc oxide (HGZO) thin films were deposited on polyethylene terephthalate substrates at room temperature by RF magnetron sputtering. The effects of RF power and Ar + H2 flow rate on electrical and optical properties of HGZO thin films were investigated systematically. All of HGZO thin films exhibited a high average transmittance of about 77.3–82.9% in the visible range, and the minimum resistivity value reached 7.1 × 10− 4 Ω·cm. Potential application of polymer-dispersed liquid crystal device based on HGZO thin film was also successfully demonstrated.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (61774160).

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Authors and Affiliations

  1. Institute of Medical Instruments, Zhejiang Pharmaceutical College, Ningbo, 315201, People’s Republic of China

    Chaoting Zhu, Tianqi Zhou & Feng Shi

  2. Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People’s Republic of China

    Weijie Song & Jia Li

  3. Zhuhai Youwei Polymer Tech. Co. Ltd, Zhuhai, 519000, People’s Republic of China

    Wenxuan Wu

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  1. Chaoting Zhu
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Correspondence to Chaoting Zhu.

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Zhu, C., Zhou, T., Shi, F. et al. Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices. Appl. Phys. A 124, 850 (2018). https://doi.org/10.1007/s00339-018-2276-z

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