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Applied Physics A

, 124:850 | Cite as

Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices

  • Chaoting Zhu
  • Tianqi Zhou
  • Feng Shi
  • Weijie Song
  • Jia Li
  • Wenxuan Wu
Article
  • 44 Downloads

Abstract

In this work, hydrogenated gallium-doped zinc oxide (HGZO) thin films were deposited on polyethylene terephthalate substrates at room temperature by RF magnetron sputtering. The effects of RF power and Ar + H2 flow rate on electrical and optical properties of HGZO thin films were investigated systematically. All of HGZO thin films exhibited a high average transmittance of about 77.3–82.9% in the visible range, and the minimum resistivity value reached 7.1 × 10− 4 Ω·cm. Potential application of polymer-dispersed liquid crystal device based on HGZO thin film was also successfully demonstrated.

Notes

Acknowledgements

This work was supported by National Natural Science Foundation of China (61774160).

Supplementary material

339_2018_2276_MOESM1_ESM.docx (325 kb)
Supplementary material 1 (DOCX 326 kb)

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Chaoting Zhu
    • 1
  • Tianqi Zhou
    • 1
  • Feng Shi
    • 1
  • Weijie Song
    • 2
  • Jia Li
    • 2
  • Wenxuan Wu
    • 3
  1. 1.Institute of Medical InstrumentsZhejiang Pharmaceutical CollegeNingboPeople’s Republic of China
  2. 2.Ningbo Institute of Material Technology and EngineeringChinese Academy of SciencesNingboPeople’s Republic of China
  3. 3.Zhuhai Youwei Polymer Tech. Co. LtdZhuhaiPeople’s Republic of China

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