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Investigation of the properties of W-doped ZnO thin films with modulation power deposition by RF magnetron sputtering

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Abstract

In this study, tungsten-doped zinc oxide (WZO) thin films were deposited on quartz glass substrates with varied modulation powers using a radio frequency (RF) magnetron sputtering technique. The crystallinity, along with the microstructural, optical and electrical properties of the WZO and zinc oxide thin films were further investigated and compared. When the modulation power was increased from 100 to 250 W, the crystallinity of WZO thin films improved and the surface crystallite size increased. An optimized WZO thin film obtained at a modulation power of 250 W exhibited a highest carrier concentration of 5.39 × 1019 cm−3 and a highest hall mobility of 17.3 cm2 V− 1 s−1. Furthermore, it also displayed a lowest resistivity of 6.69 × 10−3 Ω cm and an average transmittance of 81.25% in the wavelength range of 400–2500 nm. Lastly, an increase in carrier concentration resulted in a decrease in infrared transmittance.

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Acknowledgements

This work was financially supported by the following funds: (1) The Natural Science Foundation of China (No. 61464005 and 51562015); (2) Young scientist of Jiangxi Province (Grant No. 20153BCB23004); (3) The Natural Science Foundation of Jiangxi Province (No. 20143ACB21004, 20151BAB202010 and 20151BAB212008); (4) The Jiangxi Province Foreign Cooperation Projects, China (No. 20151BDH80031); (5) The Leader Training Object Project of Major Disciplines Academic and Technical of Jiangxi Province (No. 20123BCB22002); (6) The Colleges and Universities Landing Plan of Jiangxi Province (No. KJLD12085 and KJLD14075); (7) The Science Foundation of Jingdezhen (No. 2013-1-4, 2014-2-22 and 2014-1-3).

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Correspondence to Yuehui Hu.

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Chen, Y., Hu, Y., Zhang, X. et al. Investigation of the properties of W-doped ZnO thin films with modulation power deposition by RF magnetron sputtering. J Mater Sci: Mater Electron 28, 5498–5503 (2017). https://doi.org/10.1007/s10854-016-6211-9

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  • DOI: https://doi.org/10.1007/s10854-016-6211-9

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