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Processing of vacuum microelectronic devices by focused ion and electron beams

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Abstract.

Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without masking and annealing processes. Issues arising from beam processing such as beam-induced damage and contamination were eliminated to provide FEAs with low leakage current. Quick prototyping and repairing processes of FEs and FEAs using dual-beam processing have been demonstrated.

Nb- or Au-gated Pt FEAs have been fabricated using dual beams. The fabricated FEAs showed a turn-on voltage of 40 V for field emission with a typical emission current of about 1 μA/tip.

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Authors and Affiliations

  1. Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Science, Osaka University, Osaka, Japan, , , , , , JP

    M. Takai, W. Jarupoonphol, C. Ochiai, O. Yavas & Y.K. Park

Authors
  1. M. Takai
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  2. W. Jarupoonphol
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  3. C. Ochiai
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  4. O. Yavas
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  5. Y.K. Park
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Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003

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ID="*"Corresponding author. Fax: +81-6/6850-6662, E-mail: takai@rcem.osaka-u.ac.jp

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Takai, M., Jarupoonphol, W., Ochiai, C. et al. Processing of vacuum microelectronic devices by focused ion and electron beams . Appl Phys A 76, 1007–1012 (2003). https://doi.org/10.1007/s00339-002-1941-3

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  • DOI: https://doi.org/10.1007/s00339-002-1941-3

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