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Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy

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Abstract

By using laser molecular beam epitaxy (L-MBE), atomic scale epitaxid growth of BaTiO3(BTO) thin films on SrTiO3 (STO) substrates is achieved. Measurements of reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy, and transmission electron microscopy reveal that the BTO films arec-axis oriented single crystals with smooth surface. The multi-layer ferroelectric/superconducting heterostructures are also prepared and the ferroelectric properties of BTO films are studied. The results show that by using L-MBE technique, high quality BTO films and improved device performance can be obtained.

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Authors and Affiliations

  1. Laboratory-of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, 100080, Beijing, China

    Huisheng Wang, Kun Ma, Yanwei Liu, Zhiqiang Peng, Dafu Cui, Huibin Lu, Yueliang Zhou, Zhenghao Chen, Lin Li & Guozhen Yang

  2. National Laboratory for Superconductivity and Center for Condensed Matter Physics, Chinese Academy of Sciences, 100080, Beijing, China

    Kun Ma, Zhiqiang Peng & Lin Li

Authors
  1. Huisheng Wang
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  2. Kun Ma
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  3. Yanwei Liu
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  4. Zhiqiang Peng
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  5. Dafu Cui
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  6. Huibin Lu
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  7. Yueliang Zhou
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  8. Zhenghao Chen
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  9. Lin Li
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  10. Guozhen Yang
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Project supported by the National Natural Science Foundation of China, the National Department of Finance, and the National Center for R and D on Superconductivity of China.

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Wang, H., Ma, K., Liu, Y. et al. Atomic scale epitaxial growth of BaTiO3 thin films by laser molecular beam epitaxy. Sci. China Ser. A-Math. 40, 522–527 (1997). https://doi.org/10.1007/BF02896960

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  • DOI: https://doi.org/10.1007/BF02896960

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