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Effects of Oxide-trapped Charges and Interface Traps in Organic Self-assembled Monolayer/Silicon Systems due to Local Current Injection

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Abstract

The charge trapping characteristics of silicon (Si) substrates covered with a self-assembled monolayer (SAM) were studied using on a local biasing method with Kelvin-probe force microscopy. A hexadecyl SAM (HD-SAM) on a Si substrate, in which the molecules were covalently bonded to the Si substrate, was found to have no charge trapping sites at its monolayer/Si interface while an ocatadecylsilyl SAM (ODS-SAM) on a Si substrate, in which a thin oxide layer was inserted between the molecules and the Si substrate, showed a distinct charge trapping behavior. The alkyl monolayer directly fixed on Si is promising as a very thin insulating layer in Si microelectronics.

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Acknowledgments

This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No.20173010024970).

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Authors and Affiliations

  1. Department of Mechanical System Engineering, Gyeongsang National University, Tongyeong, 53064, Korea

    Jiwon Han

  2. Korea Electrotechnology Research Institute, Changwon, 51543, Korea

    Sangsoo Oh, Hosup Kim & Haejong Kim

  3. Department of Mechanical System Engineering, Gyeongsang National University, Tongyeong, 53064, Korea

    Sungwoong Choi & Jeonghyeon Yang

Authors
  1. Jiwon Han
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  2. Sangsoo Oh
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  3. Hosup Kim
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  4. Haejong Kim
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  5. Sungwoong Choi
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  6. Jeonghyeon Yang
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Correspondence to Jeonghyeon Yang.

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Han, J., Oh, S., Kim, H. et al. Effects of Oxide-trapped Charges and Interface Traps in Organic Self-assembled Monolayer/Silicon Systems due to Local Current Injection. J. Korean Phys. Soc. 77, 759–763 (2020). https://doi.org/10.3938/jkps.77.759

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  • DOI: https://doi.org/10.3938/jkps.77.759

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