Abstract
This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson’s equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.
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References
M. Gholizadeh and S. E. Hosseini, IEEE Trans. Electron Devices 61, (2014).
D. B. Abdi and M. J. Kumar, Superlattices and Microstructures 86, 121 (2015).
R. Vishnoi Rajat and M.J Kumar, IEEE Trans. Electron Devices} 61, 1936 (2014).
S. Sarkhel, N. Bagga and S. K. Sarkar, J. Comput Electron 15, 104 (2015).
S. Mookerjea, D. Mohata, T. Mayer, V. Narayanan, S. Datta, IEEE Electron Device Lett. 31, 564 (2010).
M. Born, K. Bhuwalka, M. Schindler, U. Ubelein, M. Schmidt, T. Sulima and I. Eisele, In: Proceedings of 25th International Conference on Microelectronics, 14 (2006).
E. H. Toh, G. H. Wang, G. Samudra and Y.C. Yeo, J. Appl. Phys. 103, 104504 (2008).
J. Wan, A. Zaslavsky, C. Le Royer and S. Cristoloveanu, IEEE Trans. Electron Devices 34, 24 (2013).
R. Vishnoi and M. J. Kumar, IEEE Trans. Electron Devices 61, 2264 (2014).
H. Toh, G. H. Wang, L. Chan, G. Samudra and Y. C. Yeo, Appl. Phys. Lett. 91, 243505 (2007).
D. R. Lide, CRC Handbook on Chemistry and Physics, 89th ed, (New York, NY, USA: Taylor & Francis, 2008)
M. J. Kumar and S. Janardhanan, IEEE Trans. Electron Devices 60, 3285 (2013).
D. B. Abdi and M. J. Kumar, IEEE Electron Device Lett. 35, (2014).
B. Ghosh and M. W. Akram, IEEE Electron Device Lett. 34, (2013).
Gnani E, Gnudi A, IEEE Trans Electron Device 59, 941 (2012).
E. O. Kane, J. Phys. Chem. Solids 12, 181 (1960).
Kane E.O., J. Appl. Phys. 32, 83 (1961).
C. H. Shih and N. D. Chien, J. Appl. Phys. 113, 134507 (2013).
A.S. Verhuslt, D. Leonelli, R. Rooyackers and G. Groeseneke, J. Appl. Phys. 110, 024510 (2011).
Device simulator Atlas, Atlas User’s Manual, (Silvaco International Software, Santa Clara, CA, USA, 2015).
Z. Ramezani and Ali A. Orouji, Superlattices and Microstructures 98, 359 (2016).
Z. Ramezani and Ali A. Orouji, Journal of Elec. Materi. 46, 2269 (2017).
M. Rahimian and Ali A. Orouji, Materials Science in Semiconductor Processing 16, 1248 (2013).
K. Boucart and A. M. Ionescu, IEEE Trans. Electron Devices 54, 1725 (2007).
B. Ghosh and M. W. Akram, IEEE Electron Device Lett. 34, 584 (2013).
P. Wang, Y. Zhuang, Cong Li, Y. Li and Z. Jiang, Japanese Journal of Applied Physics 53, 084201 (2014).
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Ramezani, Z., Orouji, A.A. A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model. Journal of the Korean Physical Society 71, 215–221 (2017). https://doi.org/10.3938/jkps.71.215
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DOI: https://doi.org/10.3938/jkps.71.215