Abstract
High-quality lead-free piezoelectric xMn-doped (K0.48Na0.52)0.985Li0.015NbO3 films (KNLN; x = 0, 0.01, 0.02, 0.03) were successfully deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel method. Effects of Mn substitution on the microstructure, dielectric properties, ferroelectric properties, and leakage current of the KNLN films were investigated in detail. Mn-doping can significantly improve the ferroelectric properties and decrease the leakage current of KNLN films. Optimal dielectric properties were obtained in films doped with 2 mol% Mn, whose dielectric constant and dielectric loss at 1 kHz were 875 and 0.030, respectively. In addition, well-saturated ferroelectric P-E hysteresis loop with large remanent polarization (2P r) and coercive field (E c) of 22.5 μC/cm2 and 65 kV/cm were obtained in 2 mol% Mn-doped KNLN film at an applied electric field of 200 kV/cm.
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References
D.L. Polla, L.F. Francis, Annu. Rev. Mater. Sci. 28, 563–597 (1998)
N. Izyumskaya, Y.I. Alivov, S.J. Cho, H. Morkoc, H. Lee, Y.S. Kang, Crit. Rev. Solid State Mater. Sci. 32, 111 (2007)
E. Cross, Nature 432, 24–25 (2004)
C. Reitz, P.M. Leufke, H. Hahn, T. Brezesinski, Chem. Mater. 26, 2195–2202 (2014)
J.G. Hao, Z.J. Xu, R.Q. Chu, W. Li, J. Du, J. Mater. Sci.: Mater. Electron. 26, 7867–7872 (2015)
W. Sakamoto, A. Iwata, T. Yogo, J. Appl. Phys. 104, 104106 (2008)
Y. Saito, H. Takao, T. Tani, T. Nonoyama, K. Takatori, T. Homma, T. Nagaya, M. Nakamura, Nature 432, 84 (2004)
J.G. Wu, D.Q. Xiao, J.G. Zhu, Chem. Rev. 115, 2559–2595 (2015)
X.P. Wang, J.G. Wu, D.Q. Xiao, J.G. Zhu, X.J. Cheng, T. Zheng, B.Y. Zhang, X.J. Lou, X.J. Wang, J. Am. Chem. Soc. 136, 2905–2910 (2014)
J.W. Huang, J.S. Liu, Z.Q. Li, K.J. Zhu, B.J. Wang, Q.L. Gu, B. Feng, J.H. Qiu, J. Mater. Sci.: Mater. Electron. 27, 899–905 (2016)
W. Li, P. Li, H.R. Zeng, J.G. Hao, Z.X. Yue, J.Z. Zhai, J. Mater. Sci.: Mater. Electron. 27, 215–220 (2016)
J.F. Li, K. Wang, F.Y. Zhu, J. Am. Ceram. Soc. 96, 3677–3696 (2013)
Y. Kizaki, Y. Noguchi, M. Miyayama, Appl. Phys. Lett. 89, 142910 (2006)
T. Lu, K.J. Zhu, J.S. Liu, J. Wang, J.H. Qiu, J. Mater. Sci.: Mater. Electron. 25, 1112–1116 (2014)
Y. Nakashima, W. Sakamoto, H. Maiwa, T. Shimura, T. Yogo, Jpn. J. Appl. Phys. 46, L311–L313 (2007)
P. Zhao, B.P. Zhang, J.F. Li, Appl. Phys. Lett. 90, 242909 (2007)
Y. Guo, K. Kakimoto, H. Ohsato, Appl. Phys. Lett. 85, 4121 (2004)
H.L. Du, F.S. Tang, D.J. Liu, D.M. Zhu, W.M. Zhou, S.B. Qu, Mater. Sci. Eng., B 136, 165 (2007)
K. Wang, J.F. Li, Adv. Funct. Mater. 20, 1924–1929 (2010)
C.W. Ahn, E.D. Jeong, S.Y. Lee, Appl. Phys. Lett. 93, 212905 (2008)
H. Brunckova, Ľ. Medvecký, P. Hvizdoš, Mater. Sci. Eng., B 178, 254–262 (2013)
Q.L. Deng, J.Z. Zhang, T. Huang, L.P. Xu, K. Jiang, Y.W. Li, Z.G. Hu, J.H. Chu, J. Mater. Chem. C. 3, 8225 (2015)
J.G. Wu, S. Qiao, J. Wang, D.Q. Xiao, J.G. Zhu, Appl. Phys. Lett. 102, 052904 (2013)
Y. Noguchi, M. Miyayama, J. Ceram. Soc. Jpn. 118, 711–716 (2010)
X.P. Wang, T. Zheng, J.G. Wu, J. Mater. Chem. A. 3, 15951–15961 (2015)
C.S. Yu, H.L. Hsieh, J. Eur. Ceram. Soc. 25, 2425–2427 (2005)
T. Takenaka, H. Nagata, Y. Hiruma, Y. Yoshii, K. Matumoto, J. Electroceram. 19, 259–265 (2007)
G.Z. Zang, L.B. Li, X.J. Yi, J. Du, Y. Li, J. Mater. Sci.: Mater. Electron. 23, 977 (2012)
F. Fu, B. Shen, J.W. Zhai, Z.K. Xu, X. Yao, Ceram. Int. 38S, S287–S290 (2012)
L. Wang, W. Ren, P. Shi, X. Chen, X. Wu, X. Yao, Appl. Phys. Lett. 97, 072902 (2010)
W. Cai, C.L. Fu, J.C. Gao, X.L. Deng, J. Mater. Sci.: Mater. Electron. 21, 317–325 (2010)
L.Y. Wang, W. Ren, P.C. Goh, K. Yao, P. Shi, X.Q. Wu, X. Yao, Thin Solid Films 537, 65–69 (2013)
C.L. Yuan, L.F. Meng, Y. Liu, C.R. Zhou, G.H. Chen, Q. Feng, G. Cheng, G.H. Rao, J. Mater. Sci.: Mater. Electron. 26, 8793–8797 (2015)
T. Matsuda, W. Sakamoto, B.Y. Lee, T. Iijima, J. Kumagai, M. Moriya, T. Yogo, Jpn. J. Appl. Phys. 51, 09LA03 (2012)
R. Lopez-Juarez, V. Gomez-Vidales, M.P. Cruz, M.E. Villafuerte-Castrejon, J. Electron. Mater. 44, 2862–2868 (2015)
Acknowledgments
This work was supported by the National Natural Science Foundation of China (Nos. 51172108, 51572123, 51672130); The Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures (Nanjing University of Aeronautics and Astronautics) (0514Y01); Jiangsu Postdoctoral Scientific Research Fund (1202016C); The Specialized Research Fund for the Doctoral Program of Higher Education (20120002120012); A Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).
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Xinxiu Zhang and Jinsong Liu contributed equally to this work.
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Zhang, X., Liu, J., Zhu, K. et al. Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO3 thin films grown by chemical solution deposition. J Mater Sci: Mater Electron 28, 487–492 (2017). https://doi.org/10.1007/s10854-016-5547-5
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DOI: https://doi.org/10.1007/s10854-016-5547-5