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Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO3 thin films grown by chemical solution deposition

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Abstract

High-quality lead-free piezoelectric xMn-doped (K0.48Na0.52)0.985Li0.015NbO3 films (KNLN; x = 0, 0.01, 0.02, 0.03) were successfully deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel method. Effects of Mn substitution on the microstructure, dielectric properties, ferroelectric properties, and leakage current of the KNLN films were investigated in detail. Mn-doping can significantly improve the ferroelectric properties and decrease the leakage current of KNLN films. Optimal dielectric properties were obtained in films doped with 2 mol% Mn, whose dielectric constant and dielectric loss at 1 kHz were 875 and 0.030, respectively. In addition, well-saturated ferroelectric P-E hysteresis loop with large remanent polarization (2P r) and coercive field (E c) of 22.5 μC/cm2 and 65 kV/cm were obtained in 2 mol% Mn-doped KNLN film at an applied electric field of 200 kV/cm.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Nos. 51172108, 51572123, 51672130); The Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures (Nanjing University of Aeronautics and Astronautics) (0514Y01); Jiangsu Postdoctoral Scientific Research Fund (1202016C); The Specialized Research Fund for the Doctoral Program of Higher Education (20120002120012); A Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD).

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Correspondence to Kongjun Zhu.

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Xinxiu Zhang and Jinsong Liu contributed equally to this work.

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Zhang, X., Liu, J., Zhu, K. et al. Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO3 thin films grown by chemical solution deposition. J Mater Sci: Mater Electron 28, 487–492 (2017). https://doi.org/10.1007/s10854-016-5547-5

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