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Terahertz Properties of GaN/AlGaN Heterostructure IMPATT Diode

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The Physics of Semiconductor Devices (IWPSD 2017)

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Abstract

The terahertz properties of a Double Drift Region (DDR) heterostructure IMPATT diode, based on GaN/A1GaN, are simulated for operation around 0.5 THz. The device DC to RF conversion efficiency of 17.1% and a noise measure of 21 dB, expected from the heterostructure GaN/A1GaN IMPATT diode, are noteworthy.

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References

  1. J.K. Mishra, G.N. Dash, S.R. Pattanaik, I.P. Mishra, Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction Double Avalanche Region IMPATT diode. Solid State Electron 48(3), 401 (2004)

    Article  ADS  Google Scholar 

  2. S.R. Pattanaik, I.P. Mishra, G.N. Dash, J.K. Mishra, Study of Si/SiGe Heterostructure DAR IMPATTs for operating at 94GHz. J. IETE 50(2), 163 (2004)

    Article  Google Scholar 

  3. J. Pradhan, S.R. Pattanaik, S.K. Swain, G.N. Dash, Low noise wide band gap SiC based IMPATT diodes at sub-millimeter-wave frequencies and at high temperature. J. Semicond. 35(3), 034006-1–6 (2014)

    Article  ADS  Google Scholar 

  4. A.K. Panda, D. Pavlidis, A. Alekseev, DC and high-frequency characteristics of GaN based IMPATTs. IEEE Trans. Electron Devices 48(4), 820 (2001)

    Article  ADS  Google Scholar 

  5. M. Mukherjee, N. Mazumder, S.K. Roy, K. Goswami, GaN IMPATT diode: a photo-sensitive high power terahertz source. Semicond. Sci. Technol. 22, 1258

    Article  ADS  Google Scholar 

  6. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, K.F. Brennan, J. Appl. Phys. 83(9), 4777 (1998)

    Article  ADS  Google Scholar 

  7. I.H. Oguzman, E. Bellotti, K.F. Brennan, J. Kolnik, R. Wang, P.P. Ruden, Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN. J. Appl. Phys. 81(12), 7827 (1997)

    Article  ADS  Google Scholar 

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Author information

Authors and Affiliations

  1. School of Physics, Sambalpur University, Jyoti Vihar, Burla, Sambalpur, 768019, Odisha, India

    S. K. Swain & G. N. Dash

  2. National Institute of Science and Technology, Palur Hills, Berhampur, 761008, Odisha, India

    S. R. Pattanaik

  3. College of Engineering Bhubaneswar, Bhubaneswas, Odisha, India

    Janmejaya Pradhan

Authors
  1. S. K. Swain
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  2. S. R. Pattanaik
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  3. Janmejaya Pradhan
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  4. G. N. Dash
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Corresponding author

Correspondence to S. K. Swain .

Editor information

Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Swain, S.K., Pattanaik, S.R., Pradhan, J., Dash, G.N. (2019). Terahertz Properties of GaN/AlGaN Heterostructure IMPATT Diode. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_44

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