Abstract
p-type ZnTe films were grown on a sputtered ZnO layer by using pulsed laser deposition in a nitrogen atmosphere. As the growth temperature was increased from 220 to 320 °C, hole concentrations in the ZnTe films decreased significantly from 1.3 × 1018 to 1.4 × 1016 cm−3 while the hole mobility increased slightly. The film growth at higher temperatures resulted in the loss of p-type behavior in the ZnTe films and on a deterioration in the film’s crystallinity. The degradation of crystal quality and p-type characteristics of ZnTe are most likely due to instable nitrogen bonding in ZnTe at high temperatures and to the large lattice mismatch of ∼25% between the ZnTe (111) and the ZnO (0001) crystal planes.
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B. Bozzini, M. A. Baker, P. L. Cavallotti, E. Cerri and C. Lenardi, Thin Solid Films 361, 388 (2000).
K. Sato, M. Hanafusa, A. Noda, A. Arakawa, M. Uchida, T. Asahi and O. Oda, J Cryst. Growth 214, 1080 (2000).
T. Baron, S. Tatarenko, K. Saminadayar, N. Magnea and J. Fontenille, Appl. Phys. Lett. 65, 1284 (1994).
C. M. Rouleau, D. H. Lowndes, J. W. Mccamy, J. D. Budai, D. B. Poker, D. B. Geohegan, A. A. Puretzky and S. Zhu, Appl. Phys. Lett. 67, 2545 (1995).
U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho and H. Morkoc, J. Appl. Phys. 98, 041301 (2005).
D. C. Look, Mat. Sci. Eng. B-Solid 80, 383 (2001).
J. Schrier, D. O. Demchenko and L. W. Wang, Nano Lett. 7, 2377 (2007).
S. H. Lee, X. G. Zhang, B. Smith, S. S. A. Seo, Z. W. Bell and J. Xu, Appl. Phys. Lett. 96, 193116 (2010).
W. Wang, A. Lin and J. D. Phillips, J Electron Mater. 37, 1044 (2008).
B. Spath, J. Fritsche, F. Sauberlich, A. Klein and W. Jaegermann, Thin Solid Films 480, 204 (2005).
J. Zhang, K. Sun, A. Kumbhar and J. Y. Fang, J. Phys. Chem. C 112, 5454 (2008).
A. Zunger, Appl. Phys. Lett. 83, 57 (2003).
T. Baron, K. Saminadayar and N. Magnea, Appl. Phys. Lett. 67, 2972 (1995).
A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma and M. Kawasaki, Nat. Mater. 4, 42 (2005).
S. Nishino, H. Suhara, H. Ono and H. Matsunami, J. Appl. Phys. 61, 4889 (1987).
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Lee, S., Smith, D.B. & Xu, J. Characteristics of p-type ZnTe films grown on sputtered ZnO by using pulsed laser deposition. Journal of the Korean Physical Society 64, 461–464 (2014). https://doi.org/10.3938/jkps.64.461
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DOI: https://doi.org/10.3938/jkps.64.461