Abstract
We report the effects of deposition temperature on the evolution of defect and second phases and on the ferroelectric properties of BiFeO3 thin films. We grew BiFeO3 thin films on (001) SrTiO3 substrates by using pulsed laser deposition at temperatures in the range of 570–600 °C at intervals of 10 °C. We found that defects and a resulting second phase appeared at temperatures greater than 590 °C. The second phase led to significant changes in the optical absorption and to the appearance of impurity peaks in the X-ray diffraction data. An analysis of the X-ray diffraction data indicated that the second phase was Fe2O3. Atomic force microscopy measurements showed that the appearance of defects accompanied an abrupt increase in the surface roughness. Furthermore, the presence of the second phase significantly affected the ferroelectric hysteresis. Our results suggest that the evolution of defects and resulting second phase in BiFeO3 thin films depends strongly on the deposition temperature.
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Refrerences
J. Wang et al., Science 299, 1719 (2003).
G. A. Smolenskii, V. Isupov, A. Agranovskaya and N. Kranik, Sov. Phys. Solid State 2, 2651 (1961).
P. Fischer, M. Polomska, I. Sosnowska and M. Szymanski, J. Phys. C 13, 1931 (1980).
C. Ederer and N. A. Spaldin, Phys. Rev. Lett. 95, 257601 (2005).
D. Lee, S. M. Yang, T. H. Kim, B. C. Jeon, Y. S. Kim and J. G. Yoon, Adv. Mater. 24, 402 (2012).
T. Choi, S. Lee, Y. J. Choi, V. Kiryukhin and S.-W. Cheong, Science 324, 63 (2009).
S. Y. Yang et al., Appl. Phys. Lett. 95, 062909 (2009).
S. H. Baek et al., Nat. Mater. 9, 309 (2010).
D. Lee et al., Adv. Mat. 24, 6490 (2012).
W. S. Choi, M. F. Chisholm, D. J. Singh, T. Choi, Jr. G. E. Jellison and H. N. Lee, Nat. Commun. 3, 689 (2012).
X. Qi, J. Dho, R. Tomov, M. G. Blamire and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005).
R. R. Das et al., Appl. Phys. Lett. 88, 242904 (2006).
H. Béa et al., Appl. Phys. Lett. 87, 072508 (2005).
B. C. Jeon et al., Adv. Mater. 25, 5643 (2013).
H. W. Jang et al., Adv. Mater. 21, 817 (2009).
Y. S. Kim, J. Kim, S. J. Moon, W. S. Choi, Y. J. Chang, J.-G. Yoon, J. Yu, J.-S. Chung and T. W. Noh, Appl. Phys. Lett. 94, 202906 (2009).
J. B. Neaton, C. Ederer, U. V. Waghmare, N. A. Spaldin and K. M. Rabe, Phys. Rev. B 71, 014113 (2005).
P. Chen, N. J. Podraza, X. S. Xu, A. Melville, E. Vlahos, V. Gopalan, R. Ramesh, D. G. Schlom and J. L. Musfeldt, Appl. Phys. Lett. 96, 131907 (2010).
J. F. Ihlefeld et al., Appl. Phys. Lett. 92, 142908 (2008).
R. V. Pisarev, A. S. Moskvin, A. M. Kalashnikova and Th. Rasing, Phys. Rev. B 79, 235128 (2009).
C. H. Yang et al., Nat. Mater. 8, 485 (2009).
Z. Wen, G. Hu, C. Yang and W. Wu, Appl. Phys. A 97, 937 (2009).
S. V. Kalinin, M. R. Suchomel, P. K. Davies and D. A. Bonnell, J. Am. Ceram. Soc. 85, 3011 (2002).
J. Seidel et al., Nat. Mater. 8, 229 (2009).
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Jeon, B.C., Chae, S.C., Kang, T.D. et al. Effect of deposition temperature on the formation of defect phases in BiFeO3 thin films. Journal of the Korean Physical Society 64, 1849–1853 (2014). https://doi.org/10.3938/jkps.64.1849
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DOI: https://doi.org/10.3938/jkps.64.1849