Abstract
This paper presents a study of the effect of swift heavy Xe ions of energy 130–167 MeV at doses of 1012–1014 cm−2 and Bi ions of 700 MeV at doses of 3·1012–3·1013 cm−2 on films of stoichiometric thermal silicon dioxide, silicon dioxide films with ion-implanted excess silicon, and SiO x films with the stoichiometric parameter x varying from 0 to 2. According to electron microscopy and Raman spectroscopy data, irradiation with the swift heavy ions resulted in the formation of silicon nanoclusters. The luminescence spectra depended on the size, number, and structure of the Si nanoclusters formed. Their size can be controlled by varying both the effect parameters (primarily, the ion energy loss per unit length of the track) and the stoichiometric composition of the films.
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Original Russian Text © S.G. Cherkova, G.A. Kachurin, V.A. Volodin, A.G. Cherkov, D.V. Marin, V.A. Skuratov, 2014, published in Avtometriya, 2014, Vol. 50, No. 3, pp. 93–100.
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Cherkova, S.G., Kachurin, G.A., Volodin, V.A. et al. Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions. Optoelectron.Instrument.Proc. 50, 292–297 (2014). https://doi.org/10.3103/S8756699014030133
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DOI: https://doi.org/10.3103/S8756699014030133