Abstract
Physical properties of Ge x Sb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys are examined theoretically. Lone pair electrons are calculated using an average coordination number (〈r〉) and the number of valence electrons, and are found to decrease with an addition of Ge. Mean bond energy (〈E〉) is proportional to glass transition temperature (T g ) and shows maxima near the chemical threshold. Cohesive energy of the system is calculated using chemical bond approach. A linear relation is found between cohesive energy, band gap (calculated theoretically and confirmed experimentally) and average heat of atomization. All these parameters are increasing with an increase in Ge content. A relation between average single bond energy and photon energy is discussed. Compactness of the structure is measured from the calculated density of the glass. An attempt is made to discuss the results in terms of structure of the glass or equivalently with average coordination number.
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References
Kamiya T., Tsuchiya M., Jpn. J. Appl. Phys., 44 (2005), 5875.
Guillevic E., Zhang X., Pain T., Calvez L., Adam J.L., Lucas J., Guilloux-Viry M., Ollivier S., Gadret G., Opt. Mater., 31 (2009), 1688.
Todorov R., Tasseva J., Babeva T., Thin Chalcogenide Films for Photonic Applications, in: Massaro A. (Ed.), Photonic Crystals — Innovative Systems, Lasers and Waveguides, Intech, Croatia, 2012, p. 143
Samson L., Phys. Status Solidi RRL., 1–3 (2010), 010.
Lovalskiy, J. Micro/Nanolith. MEMS MOEMS, 84 (2009), 043012.
Bureau B., Boussard-Pledel C., Lucas P., Zhang X., Lucas J., Molecules, 14 (2009), 4337.
Lankhorst M.H.R., Ketelaars B.W.S.M.M., Wolters R.A.M., Nat. Mater., 4 (2005) 347.
Lee S.H., Hwang Y.N., Lee S.Y., Ryoo K.C. Ahn S.J., Koo H.C., Jeong C.W., Kim Y., Koh G.H., Jeong G.T., Jeong H.S., Kim K., VLSI Tech. Dig., 20 (2004), 173.
Tichy L., Ticha H., Mater. Lett., 21 (1994) 313.
Tichy L., Ticha H., J. Non-Cryst. Solids, 189 (1995), 141.
Panukchieva V., Szekers A., Optical Mat., 30(7) (2008), 1088.
Fouad S.S., J. Phys D Appl. Phys., 28 (1995), 2318.
Saffarini G., Schlieper A., Appl. Phys. A-Matter., 61 (1995), 29.
Pamukchieva V., Szekeres A., Todorova K., Fabian M., Svab E., Revay Z, Szentmiklosi L., J. Non-Cryst. Solids, 355 (2009), 2485
Pauling L., The Nature of the Chemical Bond, 3rd ed., Cornell University Press, Ihica, NY, 1960.
Zhenhua L., J. Non-Cryst. Solids, 127 (1991), 298.
Thorpe M.F., Tichy L., Properties and Applications of Amorphous Materials, Kluwer Academic Publishers, London, 2001
Bicerano J., Ovshinsky S.R., J. Non-Cryst. Solids, 74 (1985), 75.
Pattanaik A.K., Srinivasan A., JOAM, 5 (2003), 1161.
Dahshan A., Aly K.A., Philos. Mag., 88 (2008), 361
Deneufville J.P., Rockstad H.K., Stuke J., Brenig W., Amorphous and liquid semiconductors, Taylor & Frances, London, 1974.
Kastner M., Phys. Rev. Lett., 28 (1972), 355.
Kastner M., Phys. Rev. B, 7 (1973), 5237.
Benoit C., Aigrain P., Balkanski, Selected constants relative to semiconductors, Pergamon Press, New York, 1961.
Fouad S.S., Vacuum, 52 (1999), 505.
Sharma I, Tripathi S.K., Barman P.B., Philos. Mag. 88(25), (2008) 3018.
Othman A.A., Aly K.A, Abousehly A.M., Thin Solid Films, 515 (2007), 507.
Fayek S.A., Balboul M. R., Marzouk K.H., Thin Solid Films, 515 (2007) 7281.
Vlcek M., Frumar M., J. Non-Cryst. Solids, 97–98 (1987) 1223.
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Sharma, I., Maheshwari, M. Theoretical prediction of physical parameters of Ge x Sb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys. Mater Sci-Pol 32, 661–668 (2014). https://doi.org/10.2478/s13536-014-0249-2
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DOI: https://doi.org/10.2478/s13536-014-0249-2