Abstract
Low-dose high-energy ion implantation is effective for isolating GaN high-electron-mobility transistors (HEMTs). However, lateral penetration of implanted ions induces damages at sides of AlGaN/AlN/GaN HEMTs and causes parasitic channel formation. By comparing ion implantation isolated HEMTs with varied widths, the parasitic channel behavior is characterized: the parasitic channel shows low on-state conductance, reduced gate current, and more positive threshold voltage compared to the active HEMT channel. The high N ion implantation energy for HEMT isolation was up to 375 keV, and the effective widths of HEMTs are narrowed by ~ 0.5 µm. The electrical characteristics of the parasitic channel are theoretically understood by considering ionization of point defect generated in the AlGaN/AlN/GaN heterostructures.
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References
S.J. Pearton, C.B. Vartuli, J.C. Zolper, C. Yuan, R.A. Stall, Ion implantation doping and isolation of GaN. Appl. Phys. Lett. 67, 1435 (1995). https://doi.org/10.1063/1.114518
S.O. Kucheyev, J.S. Williams, J. Zou, C. Jagadish, G. Li, Ion implantation into GaN. Mater. Sci. Eng. R 33, 51–107 (2001). https://doi.org/10.1016/S0168-583X(00)00672-8
A.N. Tallarico et al., Gate reliability of p-GaN HEMT with gate metal retraction. IEEE Trans. Electron Devices 66(11), 4829–4835 (2019). https://doi.org/10.1109/TED.2019.2938598
H. Yu et al., Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures. J. Appl. Phys. (2022). https://doi.org/10.1063/5.0076243
G. Hanington et al., P/He ion implant isolation technology for AlGaN/GaN HFETs. Electron. Lett. 34(2), 193–195 (1998). https://doi.org/10.1049/el:19980091
T. Oishi et al., Highly resistive GaN layers formed by ion implantation of Zn along the c axis. J. Appl. Phys. 94(3), 1662–1666 (2003). https://doi.org/10.1063/1.1590412
J.Y. Shiu et al., Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs. IEEE Electron Device Lett. 28(6), 476–478 (2007). https://doi.org/10.1109/LED.2007.896904
H. Umeda, T. Takizawa, Y. Anda, T. Ueda, T. Tanaka, High-voltage isolation technique using fe ion implantation for monolithic integration of AlGaN/GaN transistors. IEEE Trans. Electron Devices 60(2), 771–775 (2013). https://doi.org/10.1109/TED.2012.2230264
A. Taube et al., Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al. Phys. Status Solidi A Appl. Mater. Sci. 212(5), 1162–1169 (2015). https://doi.org/10.1002/pssa.201431724
A.Y. Polyakov, S.J. Pearton, P. Frenzer, F. Ren, L. Liu, J. Kim, Radiation effects in GaN materials and devices. J. Mater. Chem. C Mater. 1(5), 877–887 (2013). https://doi.org/10.1039/c2tc00039c
S.R. Challa et al., Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures: the role of the GaN channel layer. IEEE Trans. Electron Devices 68(1), 24–28 (2021). https://doi.org/10.1109/TED.2020.3037259
N.A. Vega et al., Outstanding reliability of heavy-ion-irradiated AlInN/GaN on silicon HFETs. IEEE Trans. Nucl. Sci. 66(12), 2417–2421 (2019). https://doi.org/10.1109/TNS.2019.2954216
G. Sonia et al., Proton and heavy ion irradiation effects on AlGaN/GaN HFET devices. IEEE Trans. Nucl. Sci. 53(6), 3661–3666 (2006). https://doi.org/10.1109/TNS.2006.885006
U. Peralagu et al., CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance. Int. Electron Devices Meeting IEDM (2019). https://doi.org/10.1109/IEDM19573.2019.8993582
H. Yu et al., Surface state spectrum of AlGaN/AlN/GaN extracted from static equilibrium electrostatics. IEEE Trans. Electron Devices 68(11), 5559–5564 (2021). https://doi.org/10.1109/TED.2021.3115086
B. Parvais et al., Advanced transistors for high frequency applications. ECS Trans. 97(5), 27–38 (2020). https://doi.org/10.1149/09705.0027ecst
J.F. Ziegler, M.D. Ziegler, J.P. Biersack, SRIM—the stopping and range of ions in matter (2010). Nucl. Instrum. Methods Phys. Res. B 268(11–12), 1818–1823 (2010). https://doi.org/10.1016/j.nimb.2010.02.091
H. Yu et al., Thermal budget increased alloy disorder scattering of 2DEG in III-N heterostructures. Appl. Phys. Lett. (2022). https://doi.org/10.1063/5.0093839
K. Lee, M.S. Shur, T.J. Drummond, H. Morkoç, Low field mobility of 2-d electron gas in modulation doped Al xGa1-xAs/GaAs layers. J. Appl. Phys. 54(11), 6432–6438 (1983). https://doi.org/10.1063/1.331922
S. Turuvekere, D.S. Rawal, A. Dasgupta, N. Dasgupta, Evidence of Fowler-Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature. IEEE Trans. Electron Devices. 61(12), 4291–4294 (2014). https://doi.org/10.1109/TED.2014.2361436
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Yu, H., Peralagu, U., Alian, A. et al. Parasitic side channel formation due to ion implantation isolation of GaN HEMT. MRS Advances 7, 1274–1278 (2022). https://doi.org/10.1557/s43580-022-00453-6
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DOI: https://doi.org/10.1557/s43580-022-00453-6