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The regulation effect of trace amount of oxygen on the properties of p-type boron-doped diamond

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Abstract

The light doping behavior of boron in microwave plasma chemical vapor deposition diamond films by trace oxygen was investigated. As the oxygen concentration (O/C) increased from 0 to 5%, the growth rate of the diamond film first decreased and then increased. When oxygen was added during the diamond doping process, the suppression of boron doping and the improvement of crystal quality could be observed, and there was a significant suppression of residual nitrogen. Hall effect measurement results show that under the condition of O/C = 3%, high mobility and high quality diamond films can be obtained with a growth rate of 9 μm/h. This work shows that a trace amount of oxygen can compensate the crystal strain brought by boron doping and improve the crystal and surface quality. This technology can obtain high-quality and thick boron-doped diamond films with acceptable mobility, which are suitable for future advanced optoelectronic device applications.

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Data availability

The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 62274084, 61974059) and the Fundamental Research Funds for the Central Universities (0210-14380193).

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Authors and Affiliations

  1. School of Electronic Science & Engineering, Nanjing University, Nanjing, 210023, China

    Gengyou Zhao, Kun Tang, Yan Teng, Weikang Zhao, Kai Yang, Shunming Zhu & Shulin Gu

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  1. Gengyou Zhao
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  2. Kun Tang
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  3. Yan Teng
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Contributions

GYZ: Investigation, methodology, writing—original draft. KT: Conceptualization, writing—review & editing, funding acquisition. YT: Investigation; formal analysis. WKZ: Investigation. KY: Investigation. SMZ: Investigation, formal analysis. SLG: Supervision, funding acquisition.

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Correspondence to Kun Tang or Shulin Gu.

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Zhao, G., Tang, K., Teng, Y. et al. The regulation effect of trace amount of oxygen on the properties of p-type boron-doped diamond. Journal of Materials Research 39, 1313–1323 (2024). https://doi.org/10.1557/s43578-024-01312-w

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