Abstract
The modulations of electronic band structure of Hf2CO2 MXene through substitution-doping approaches (two different substitution sites, i.e., C and O sites) are theoretically studied within the first-principles density functional theory. It is found that SiC-, GeC-, BNC-, and NFO-doped Hf2CO2 nanosheets remain semiconductor properties with a wide range of band gap, while NC/O-, BO-, PO-, and FO-doped Hf2CO2 nanosheets possess to degenerate semiconductor or metallic characters. The orbital contribution analysis indicates that the p states of dopants play an important role in modulating the electronic band structures of the doped Hf2CO2 nanosheets. Furthermore, negative solution energy and binding energy of the above doped systems indicate the feasibility of the doping technique. We hope that these results can provide a theoretical basis to engineer the band gap of Hf2CO2 MXene materials and even guide these materials design and optimization in the applications of electronics.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (Grant Nos. 11875004, 11974055) and the Fundamental Research Funds for the Central Universities (Grant No. FRF-IDRY-19-029). The authors also thank Prof. Peihong Zhang at University at Buffalo for his helpful discussions and suggestions.
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Zhang, Y., Wu, M., Wang, Z. et al. Engineering the band gap of Hf2CO2 MXene semiconductor by C/O doping. Journal of Materials Research 36, 1678–1685 (2021). https://doi.org/10.1557/s43578-021-00200-x
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DOI: https://doi.org/10.1557/s43578-021-00200-x