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Electrical Characteristics of RF Sputtered ZnO/HfO2 Interfaces in Transparent Thin Film Transistors

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Abstract

In this work, we have reported the interface characterization of rf sputtered ZnO/HfO2 in thin film transistor structure by dc current-voltage and admittance spectroscopy. The interface state density (Dit) of 1013 eV−1cm−2 was extracted from the Gp/ω vs ω plot was comparable to value obtained from the subthreshold behavior. The grain boundary trap density (NGB) of 9.12×1012 cm−2 was estimated using Levinson’s model. The interface state density distribution below the conduction band edge shows a decreasing trend with energy below the conduction band edge. We also studied the impact of introducing MgO interfacial layer between ZnO and HfO2 interface as an approach towards decreasing the interface state density.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, University of Toledo, OH, 43606, USA

    Prem Thapaliya, Wenchao Lu & Rashmi Jha

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  1. Prem Thapaliya
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  2. Wenchao Lu
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  3. Rashmi Jha
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Thapaliya, P., Lu, W. & Jha, R. Electrical Characteristics of RF Sputtered ZnO/HfO2 Interfaces in Transparent Thin Film Transistors. MRS Online Proceedings Library 1792, 545 (2015). https://doi.org/10.1557/opl.2015.648

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