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Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors

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Abstract

Solution processable metal oxide semiconductors offer opportunities for large area fabrication of transparent logic circuits without requiring expensive vacuum equipment. Indium zinc oxide (IZO) is one of the more popular research targets for use as active layer in thin-film transistors (TFTs). In this paper, we present our results on the fabrication of TFTs with IZO semiconductor film using spin-coating from the 1:1 molar ratio mixed solution of indium nitrate and zinc carbonate. We optimize the device fabrication process by studying the effect of stacking multiple layers on top of each other. The electrical characteristics of the TFTs are found to depend strongly on the number of the spin coating steps employed. The practical applicability of the TFTs is also demonstrated by fabricating a load-type inverter circuit and measuring its electrical response, modeling operation in digital circuitry.

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Acknowledgements

This research was supported by Chungbuk National University Korea National University Development Project (2022).

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Author notes

  1. Soochang You and Anvar Tukhtaev are equal contribution to this work.

Authors and Affiliations

  1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea

    Soochang You, Anvar Tukhtaev, Han Lin Zhao, Xiao Lin Wang, Jae-Yun Lee, Jin Hee Lee, Sung Il Jang & Sung-Jin Kim

  2. Department of Chemistry, Konkuk University, 120 Neungdong-Ro, Gwangjin-Gu, Seoul, 05029, Korea

    Gergely Tarsoly

  3. College of Ocean, Jiangsu University of Science and Technology, Zhenjiang, 212003, China

    Fei Shan

  4. Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 27469, Korea

    Yong Jin Jeong

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  1. Soochang You
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Correspondence to Sung-Jin Kim.

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You, S., Tukhtaev, A., Tarsoly, G. et al. Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors. J. Electr. Eng. Technol. 19, 2521–2526 (2024). https://doi.org/10.1007/s42835-023-01689-4

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  • DOI: https://doi.org/10.1007/s42835-023-01689-4

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