Abstract
Stress control using AlN/GaN superlattices (SLs) for epitaxy of GaN on 200 mm Si (111) substrates is reported. Crack-free 2 μm GaN layers were grown over structures containing 50 to 100 pairs of 3-5 nm AlN/10-30 nm GaN SLs. Compressive and tensile stress can be precisely adjusted by changing the thickness of the AlN and GaN layers in the SLs. For a constant period thickness, the effects of growth conditions, such as growth rate of GaN, V/III ratio during AlN growth, and growth temperature, on wafer stress were investigated.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. Ideda, Y. Niiyama, H. Kambayashi, Y. Sato, T. Nomura, S. Kato, and S. Yoshida, Proc. IEEE 98, 1151 (2010).
W. E. Hoke, R. V. Chelakara, J. P. Bettencourt, T. E. Kazior, J. R. LaRoche, T. D. Kennedy, J.J. Mosca, A. Torabi, A. J. Kerr, H.S. Lee, and T. Palacios, J. Vac. Sci. Technol. B 30, 02B101–1 (2012).
A. Dadgar, F. Schulze, M. Wienecke, A. Gadanecz, J. Blasing, P. Veit, T. Hempel, A. Diez, J. Christen, and A. Krost, New J. Phys. 9, 389 (2007).
S. Tripathy, V. K.X. Lin, S. B. Dolmanan, J. P. Y. Tan, R. S. Kajen, L. K. Bera, S. L. Teo, M. K. Kumar, S. Arulkumaran, G. I. Ng, S. Vicknesh, S. Todd, W.Z. Wang, G. Q. Lo, H. Li, D. Lee, and S. Han, Appl. Phys. Lett. 101, 082110 (2012).
H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken, and S. Tripathy, J. Appl. Phys. 113, 023510 (2013).
K. Cheng, M. Leys, S. Degroote, M. Germain, and G. Borghs, Appl. Phys. Lett. 92, 192111 (2008).
E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, and P. Gibart, Appl. Phys. Lett. 79, 3230 (2001).
T. Kim, S. Yang, J. Son, Y. Hong, and G. Yang, J. Korean Phys. Soc. 50, 801 (2007).
T. Egawa, (IEDM Tech. Dig. 2012), pp613–616; A. Ubukata, K. Ikenaga, N. Akutsu, A. Yamaguchi, K. Matsumoto, T. Yamazaki, and T. Egawa, J. Crystal Growth 298, 198 (2007).
S. Hearne, E. Chason, J. Han, J. Floro, J. Figiel, J. Hunter, H. Amano, I. Tsong, Appl. Phys. Lett. 74, 356 (1999).
H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. Floro, E. Chason, and J. Figiel, Jpn. J. Appl. Phys. 37, L1540 (1998).
S. Hearne, J. Han, S. Lee, J. Floro, D. Follstaedt, E. Chason, and I. Tsong, Appl. Phys. Lett. 76, 1534 (2000).
Acknowledgments
The authors would like to thank the film metrology group (D. Byrnes, Y. Li, A. Krahnert, and F. Ramos) at Veeco MOCVD operations for material characterization.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Su, J., Armour, E.A., Krishnan, B. et al. Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers. MRS Online Proceedings Library 1736, 14–19 (2014). https://doi.org/10.1557/opl.2014.942
Published:
Issue Date:
DOI: https://doi.org/10.1557/opl.2014.942