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Ultrafast Laser Induced Subwavelength Periodic Surface Structures on Semiconductors/Metals and Application to SERS Studies

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Abstract

In this manuscript a simple approach is discussed to fabricate uniform periodic surface structures on semiconductor surfaces by femtosecond laser irradiation for surface-enhanced Raman spectroscopy (SERS) applications. Gold films having different thickness are first deposited on semiconductor silicon (Si) surfaces and then periodic surface structures are fabricated by femtosecond laser irradiation. The periodic structures are observed to be uniform over a large area with chain type structure formation of gold and Si. We have studied the formation of these surface structures on Si surface by having different thickness gold films deposited on Si substrates. This approach of the fabrication of surface structures with the assistance of gold film is found to help in local field enhancement and hence work as suitable substrate for the SERS experiments. The conditions for achieving high enhancement factor in SERS with different gold film thicknesses are explored in detail. We also present here the formation of low frequency ripples on Silicon (Si) and high frequency as well as low frequency ripples on titanium (Ti) surface in air and water environments by irradiation with fs laser pulses. Different morphologies were observed on Ti surface depending upon the laser irradiation parameters and the surrounding dielectric medium.

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Correspondence to Narayana Rao Desai.

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Saikiran, V., Dar, M.H., Kuladeep, R. et al. Ultrafast Laser Induced Subwavelength Periodic Surface Structures on Semiconductors/Metals and Application to SERS Studies. MRS Advances 1, 3317–3327 (2016). https://doi.org/10.1557/adv.2016.468

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  • DOI: https://doi.org/10.1557/adv.2016.468

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