Abstract
Using a resonant-tunneling diode (RTD) as a nonlinear element of microwave signal converters is discussed. The research results of degradation of RTDs during the operation are given. The diffusion coefficients of Al in a resonant-tunneling structure (RTS) and of Si in near-contact zones of the RTD are determined. The structure of a diagnostic model of an RTD and the methodology of creating a reliability prediction of RTDs and nonlinear converters of microwave radio signals based on them are proposed.
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References
T. C. L. G. Solner et al., Appl. Phys. Lett. 43, 588 (1983).
E. R. Brown, W. D. Goodhue, and T. C. L. G. Solner, J. Appl. Phys. 64, 1519 (1988).
Yu. A. Ivanov, S. A. Meshkov, V. D. Shashurin, N. V. Fedorkova, and I. A. Fedorenko, “Subharmonic mixer with improved intermodulation characteristics based on a resonant tunnel diode,” J. Commun. Technol. Electron. 55, 921 (2010).
Yu. A. Ivanov, S. A. Meshkov, N. V. Fedorkova, I. B. Fedorov, V. D. Shashurin, and V. Yu. Sinyakin, “Increase of quality of radio-electronic systems of new generation due to application of resonant tunneling nanodiodes. Part 1,” Nanoinzheneriya, No. 1, 34–44 (2011).
Yu. A. Ivanov, S. A. Meshkov, N. V. Fedorkova, I. B. Fedorov, V. D. Shashurin, and V. Yu. Sinyakin, “Increase of quality of radio-electronic systems of new generation due to application of resonant tunneling nanodiodes. Part 2,” Nanoinzheneriya, No. 2, 93–95 (2011).
S. A. Meshkov, Yu. A. Ivanov, N. A. Vetrova, V. V. Nazarov, V. Yu. Sinyakin, I. A. Fedorenko, N. V. Fedorkova, and V. D. Shashurin, “Prospects of development of nonlinear radio signal converters based on resonant-tunneling nanodiodes,” Vestn. Mosk. Tekh. Univ. Baumana, Ser. Priborostroen., No. 4 (89), 100–113 (2012).
Yu. A. Ivanov, A. G. Gudkov, S. A. Meshkov, V. D. Shashurin, V. A. Klevtsov, S. V. Agasieva, and V. Yu. Sinyakin, “Resonant-tunneling nano-diodes application for radio frequency identification technology based invasive biosensor systems' electromagnetic energy transformers efficiency increase,” Elektromagn. Volny Elektron. Sist. 22 (4), 60–65 (2014).
V. Yu. Sinyakin, Yu. A. Ivanov, A. I. Ivanov, M. O. Makeev, S. A. Meshkov, and A. A. Zybin, “The use of RTD in rectifiers of microwave signals of micro watt power,” in Proceedings of the 25th International Crimean Conference on Microwave and Telecommunication Technology CriMiCo’2015, Sevastopol, 2015, pp. 263–264.
K. Finkenzeller, RFID Handbook Fundamentals and Applications in Contactless Smart Cards and Identification, 3rd ed. (Wiley, Chichester, 2010).
H. Mehrer, Diffusion in Solids. Fundamentals, Methods, Diffusion-Controlled Processes (LE-TEX Jelonek, Schmidt and VocklerGbR, Leipzig, 2007).
D. J. Fisher, Diffusion in GaAs and Other III–V Semiconductors, 10 Years of Research (Scitec Publ., Switzerland, 1998).
H. M. You, U. M. Gösele, and T. Y. Tan, “Simulation of the transient indiffusion-segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices,” J. Appl. Phys. 74, 2461–2470 (1993).
C.-H. Chen, U. M. Gösele, and T. Y. Tan, “Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs,” Appl. Phys. A 69, 313–321 (1999).
B. Chen, Q.-M. Zhang, and J. Bernholc, “Si diffusion in GaAs and Si-induced interdiffusion in GaAs/AlAs superlattices,” Phys. Rev. B 49, 2985–2988 (1994).
H. Bracht, E. E. Haller, K. Eberl, and M. Cardona, “Self-and interdiffusion in AlxGa1–xAs/GaAs isotope heterostructures,” Appl. Phys. Lett. 74, 49–51 (1999).
S. F. Wee, M. K. Chai, K. P. Homewood, and W. P. Gillin, “The activation energy for GaAs/AlGaAs interdiffusion,” J. Appl. Phys. 82, 4842–4846 (1997).
H. Ono, N. Ikarashi, and T. Baba, “Al diffusion into GaAs monatomic AlAs layers investigated by localized vibrational modes,” Appl. Phys. Lett. 66, 601–603 (1995).
M. O. Makeev, Yu. A. Ivanov, S. A. Meshkov, and V. Yu. Sinyakin, “Investigation of thermal degradation of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures,” Nano-Mikrosist. Tekh., No. 12, 23–29 (2014).
M. O. Makeev, Y. A. Ivanov, and S. A. Meshkov, “Quality diagnostics of nanoscale AlAs/GaAs resonant tunnelling heterostructures based on IR-spectroscopic ellipsometry,” J. Phys.: Conf. Ser. 584, 012014 (2015). doi 10.1088/1742-6596/584/1/012014
M. O. Makeev, Yu. A. Ivanov, and S. A. Meshkov, “Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry,” Semiconductors 50, 66 (2016).
O. P. Gludkin, Methods and Devices Tests RJeS and JeVS, The Handbook for Higher Schools (Vyssh. Shkola, Moscow, 1991) [in Russian].
V. A. Gaisler, D. A. Tenne, N. T. Moshegov, A. I. Toropov, A. A. Yaskin, and A. P. Shebanin, “Phonon spectrum superlattices GaAs/AlAs: the direct and inverse spectral problems,” Phys. Solid State 38, 1235 (1996).
B. Samson et al., “Effects of interface broadening on far-infrared and Raman spectra of GaAs/AlAs superlattices,” Phys. Rev. B 46, 2375 (1992).
N. Hara and T. Katoda, “Characterization of interdiffusion coefficients in GaAs–AlAs superlattices with laser Raman spectroscopy,” J. Appl. Phys. 69, 2112–2116 (1991).
V. A. Vashchenko and V. F. Sinkevitch, Physical Limitations of Semiconductor Devices (Springer Science, New York, 2008).
R. Tsu and L. Esaki, “Tunneling in a finite superlattice,” Appl. Phys. Lett. 22, 562–564 (1973).
A. S. Pronikov, Parametric Reliability of Machines (Mosk. Gos. Tekh. Univ. im. N.E. Baumana, Moscow, 2002) [in Russian].
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Original Russian Text © S.A. Kozubnyak, S.A. Meshkov, O.S. Naraikin, E.N. Soboleva, V.D. Shashurin, 2017, published in Rossiiskie Nanotekhnologii, 2017, Vol. 12, Nos. 7–8.
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Kozubnyak, S.A., Meshkov, S.A., Naraikin, O.S. et al. Reliability Prediction of AlGaAs Resonant-Tunneling Diodes and Nonlinear Converters of Microwave Radio Signals Based on Them. Nanotechnol Russia 12, 360–368 (2017). https://doi.org/10.1134/S1995078017040127
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DOI: https://doi.org/10.1134/S1995078017040127