Abstract
Electrical parameters and root-mean-square surface roughness of the metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures with different indium contents (0.30–0.55) have been investigated. Field-effect transistors with the gate length L g = 140−265 nm fabricated on the basis of metamorphic nanoheterostructures with an indium content of ~40% in the channel exhibit the current and power gain cutoff frequency f C = 147 GHz and f max = 266 GHz, respectively.
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Original Russian Text © G.B. Galiev, R.A. Khabibullin, D.S. Ponomarev, A.E. Yachmenev, A.S. Bugaev, P.P. Maltsev, 2015, published in Rossiiskie Nanotekhnologii, 2015, Vol. 10, Nos. 7–8.
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Galiev, G.B., Khabibullin, R.A., Ponomarev, D.S. et al. Metamorphic nanoheterostructures for millimeter-wave electronics. Nanotechnol Russia 10, 593–599 (2015). https://doi.org/10.1134/S1995078015040059
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DOI: https://doi.org/10.1134/S1995078015040059