Abstract
In the present research work Se75Te13In12 chalcogenide glass has been prepared by melt quenching technique. The non-isothermal Differential Scanning Calorimetry (DSC) measurement of synthesized alloy has been executed at constant heating rate of 25 K/min. The glass transition temperature (Tg), crystallization temperature (Tc) and melting temperature (Tm) are found to be 349, 376 and 533 K, respectively. Thin films of 400 nm thickness of Se75Te13In12 alloy were prepared by thermal evaporation technique. To study the phase transformation, the thermal annealing was done at two different temperatures 353 and 363 K for 2 h in a vacuum furnace under a vacuum of 10–3 Torr. Optical measurements were done for as-prepared and annealed films. The optical band gap is found to decrease with increasing annealing temperature. The transformed phases of as grown and thermally annealed films were analyzed by High Resolution X-ray diffraction (HRXRD) and Field Emission Scanning Electron Microscope (FESEM).
Similar content being viewed by others
REFERENCES
Hudson, D.D., Magi, E.C., Judge, A.C., Dekker, S.A., and Eggleton, B.J., Highly nonlinera chalcogenide glass micro/nanofiber devices: Design, theory, and octave-spanning spectral generation, Opt. Commun., 2012, vol. 285, pp. 4660–4669.
Candice, T., Toor, F., Claire, F., Gmachl, C.F., and Arnold, C.F., Chalcogenide glass waveguides integrated with quantum cascade lasers for on-chip mid-IR photonic circuits, Opt. Lett., 2010, vol. 35, no. 20, pp. 3324–3326.
Ailavajhala, M.S., Gonzalez-Velo, Y., Poweleit, C.D., Barnaby, H.J., Kozicki, M.N., Butt, D.P., and Mitkova, M., New functionality of chalcogenide glasses for radiation sensing of nuclear wastes, J. Hazard. Mater., 2014, vol. 269, pp. 68–73.
Chahal, R., Starecki, F., Boussard-Pledel, C., Doualan, J.L., Michel, K., Brilland, L., Braud, A., Camy, P., Bureau, B., and Nazabal, V., Fiber evanescent wave spectroscopy based on IR fluorescent chalcogenide fibers, Sens. Actuators,Ser. B, 2016, vol. 229, pp. 209–216.
Sun, Y., Dai, S., Zhang, P., Wang, X.Xu., Liu, Z., Chen, F.Wu., Zhang, Y., Wang, R., and Tao, G., Fabrication and characterization of multimaterial chalcogenide glass fiber tapers with high numerical apertures, Opt. Express, 2015, vol. 23, pp. 23 t472–23 483.
Pelusi, M.D., Taleed, V.D., Fu, L., Lamont, M.R.E., Madden, S., and Cho, D.Y., Applications of highly-nonlinear chalcogenide glass devices tailored for high-speed all-optical signal processing, IEEE, 2008, vol. 14, no. 3, pp. 529–539.
Min’ko, V.I., Indutnyy, I.Z., Shepeliavyi, P.E., and Litvin, P.M., Application of amorphous chalcogenide films for recording of high-frequency phase-relief diffraction gratings, J. Optoelectron. Adv. Mater., 2005, vol. 7, no. 3, pp. 1429–1432.
Canciamilla, A., Morichetti, F., Grillanda, S., Velha, P., Sorel, M., Singh, V., Agarwal, A., and Kimerling, L.C., Photo-induced trimming of chalcogenide-assisted silicon waveguides, Opt. Express, 2012, vol. 20, no. 14, pp. 15 807–15 812.
Zakery, A. and Elliott, S.R., Optical nonlinearities in chalcogenide glasses and their applications, Springer Ser. Opt. Sci., 2007, vol. 135, pp. 129–150.
Anne, M.L., Keirsse, J., Nazabal, V., Hyodo, K., and Inoue, S., and Boussard-Pledel, C., Chalcogenide glass optical waveguides for infrared biosensing, Sensors, 2009, vol. 9, pp. 7398–7411.
Hudgens, S. and Johnson, B., Overview of phase-change chalcogenide nonvolatile memory technology, MRS Bull., 2004, vol. 29, no. 11, pp. 829–832.
Kolobov, A.V. and Tominaga, J., Chalcogenide glasses in optical recording: Recent progress, J. Optoelectron. Adv. Mater., 2002, vol. 4, no. 3, pp. 679–686.
Yamada, N., Erasable phase-change optical materials, Mater. Res. Bull., 1996, vol. 21, pp. 48–50.
Borg, H.J. and Woudenberg, R.V., Trends in optical recording, J. Magn. Magn. Mater., 1999, vol. 193, pp. 521–523.
Ovshinsky, S., Amorphous materials—the key to new devices, IEEE Proc. CAS, 1998, vol. 1, pp. 33–36.
Boolchand, P., Georgiev, D.G.Qu., Wang, F., Chai, L., and Chakravarty, S., Nanoscale phase separation effects near r = 2.4 and 2.67, and rigidity transitions in chalcogenide glasses, C. R. Chim., 2002, Vol. 5, pp. 713–724.
Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., and Takao, M., Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory, J. Appl. Phys., 1991, vol. 69, pp. 2849–2856.
Coombs, J.H., Jongenelis, A.P.J.M., van Es-Spiekman, W., and Jacobs, B.A.J., Laser-induced crystallization phenomena in GeTe-based alloys, J. Appl. Phys., 1995, vol. 78, pp. 4906–4917.
Peng, C., Cheng, L., and Mansuripur, M., Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media, J. Appl. Phys., 1997, vol. 82, pp. 4183–4191.
Nakayama, K., Kojima, K., Hayakawa, F., Imai, Y., Kitagawa, A., and Suzuki, M., Submicron nonvolatile memory cell based on reversible phase transition in chalcogenide glasses, Jpn. J. Appl. Phys., 2000, vol. 39, pp. 6157–6161.
Lai, S. and Lowrey, T., OUM-A 180 nm nonvolatile memory cell element technology for standalone and embedded applications, in Technical Digest of the International Electron Devices Meeting,2001, vol. 1, pp. 803–806.
Yoon, S.M., Lee, N.Y., Ryu, S.O., Chio, K.J., Park, Y.S., Lee, S.Y., Yu, B.G., Kang, M.J., Chio, S.Y., and Wuttig, M., Sb-Se-based phase-change memory device with lower power and higher speed operations, IEEE Electron Dev. Lett., 2006, vol. 27 p, pp. 445–447.
Tripathi, R.P., Akhtar, M.S., Alvi, M.A., and Khan, S.A., A study on photo-induced crystallization in Ga10Se78Tl12 thin films, J. Mater. Sci., 2015, vol. 26, no. 8, pp. 6206–6211.
Tripathi, R.P., Akhtar, M.S., Alvi, M.A., and Khan, S.A., Influence of annealing treatment on phase transformation of Ga15Se77Tl8 thin films, J. Mater. Sci., 2016, vol. 27, no. 8, p. 8287.
Kamboj, MS., Kaur, G., Thangaraj, R., and Avasthi, D.K., Effect of heavy ion irradiation on the electrical and optical properties of amorphous chalcogenide thin films, J. Phys. D: Appl. Phys., 2002, vol. 35, no. 5, pp. 477–479.
Srivastava, A., Tripathi, R.P., Akhtar, M.S., and Khan, S.A., Studies on phase change Ge15Se77Sb8 thin films by laser irradiation, J. Mater. Sci., 2016, vol. 27, no. 3, pp. 2426–2429.
Lafi, O.A. and Imran, M.M.A., The effect of gamma irradiation on glass transition temperature and thermal stability of Se96Sn4 chalcogenide glass, Radiat. Phys. Chem., 2010, vol. 79, pp. 104–108.
Dwivedi, D.K., Pathek, H.P., Shukla N., and Kumar, A., Effect of thermal annealing on structure and optical band gap of amorphous Se75 – xTe25Sbx thin films by vacuum evaporation technique, J. Ovonic Res., 201, vol. 10, no. 1, pp. 15–22.
Khan, S.A., Lal, J.K., and Al-Ghamdi, A.A., Thermal annealing effect of on optical constants of vacuum evaporated Se75S25 – xCdx chalcogenide thin films, Opt. Laser Technol., 2010, vol. 42, no. 5, pp. 839–844.
Khan, S.A., Lal J.K., Al-Agel, F.A., and Alvi, M.A., Non-isothermal crystallization in Ga–Se–Ag chalcogenide glass by differential scanning calorimetry, J. Alloys Compd., 2013, vol. 554, pp. 227–231.
Li, Z., Zheng, S., Zhang, Y., Teng, R., Huang, T., Chena, C., and Lua, G., Controlled synthesis of tellurium nanowires and nanotubes via a facile, efficient, and relatively green solution phase method, J. Mater. Chem. A, 2013, vol. 1, pp. 15046–15052
Tabernor, J., Christiana, P., and O’Brien, P., A general route to nanodimensional powders of indium chalcogenides, J. Mater. Chem., 2006, vol. 16, pp. 2082–2087.
Thirumavalavan, S., Investigation of the structural, optical and electrical properties of copper selenide thin films, Mater. Res., 2015, Vol. 18, no. 5, pp. 1000–1007.
Bhalerao, A.B., Wagh, B.G., Shinde, N.M., Jamburec, S.B., and Lokhande, C.D., Crystalline zinc indium selenide thin film electrosynthesis and its photoelectrochemical studies, Energy Proc., 2014, vol. 54, pp. 549–556.
Hafiz, M.M., El-Kabany, N., Mahfoz Kotb, H., and Bakier, Y.M., Annealing effects on structural and optical properties of Ge10Sb30Se60 thin film, Int. J. Thin Films Sci. Technol., 2015, vol. 4, no. 3, pp. 163–171.
Khan, S.A. and Al Ghamdi, A.A., Influence of laser-irradiation on the optical constants Se75S25 – xCdx thin films, Mater. Lett., 2009, vol. 63, pp. 1740–1742.
Khan, S.A., Zulfequar, M., and Husain, M., Effect of cadmium addition on the optical constants of thermally evaporated amorphous Se–S–Cd thin films, Curr. Appl. Phys., 2010, vol. 10, pp. 145–152.
Tauc, J., Amorphous and Liquid Semiconductors, New York: Plenum, 1974, p. 159.
Aly, K.A., Osman, M.A., Abousehly, A.M., and Othman, A.A., Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films, J. Phys. Chem. Solids, 2008, vol. 69, pp. 2514–2519.
Mott, N.F., Conduction in non-crystalline materials, Philos. Mag., 1969, Vol. 19, no. 160, pp. 835–852.
Hasegawa, S., Yazaia, S., and Shimizu, T., Investigation of the effect of film thickness and heat treatment on the optical properties of TeSeSn thin films, Solid State Commun., 1978, vol. 26, pp. 407–410.
Chaudhri, S. and Biswas, S.K., Variation of optical gap of thick amorphous selenium film, J. Non-Cryst. Solids, 1983, vol. 54, pp. 179–182.
Rafea, M.A. and Farid H., Phase change and optical band gap behavior of Se0.8S0.2 chalcogenide glass films, Mater. Chem. Phys., 2009, vol. 113, nos. 2–3, pp. 868–872.
Al-Agel, F.A., Al-Arfaj, E.A., Al-Marzouki, F.M., Khan, S.A., and Al-Ghamdi, A.A., Study of phase separation in Ga25Se75 – xTex chalcogenide thin films, Prog. Nat. Sci.: Mater. Int., 2013, vol. 23, no. 2, pp. 139–144.
Toyama, T., Konishi, T., Seo, Y., Tsuji, R., Terai, K., Nakashima, Y., Maenishi, R., Arata, A., Yudate, S., and Tsutsumi, Y., Annealing-induced optical-bandgap widening of Cu2ZnSnS4 thin films with observation of simultaneous increase in local-structure ordering, Jpn. J. Appl. Phys., 2014, vol. 54, no. 1.
Khan, S.A., Khan, Z.H., El-Sebaii, A.A., Al-Marzouki, F.M., and Al-Ghamdi, A.A., Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films, Phys. B (Amsterdam, Neth.), 2010, vol. 405, pp. 3384–3390.
FUNDING
Thanks are due to UGC, New Delhi, India for providing financial support in form of Major Research Project (F. no. 42-780/2013 (SR).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Srivastava, A., Tiwari, S.N., Lal, J.K. et al. Phase Transformation in Se75Te13In12 Chalcogenide Thin Films. Glass Phys Chem 45, 111–118 (2019). https://doi.org/10.1134/S1087659619020111
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1087659619020111