Abstract
A photodetector array chip for detection of the optical signal in a wave range of 0.4–1.0 μm; conversion of the optical signal into the electric signal; and its extraction in the analog form to 1, 2, 4, 8, or 16 outputs has been designed, fabricated, and studied. The main parameters of this chip are the following: the charge capacity is up to 200000 electrons, the frame rate is higher than 600 Hz at the maximum resolution, and the integrated sensitivity is up to 1000 V/(lx s).
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Original Russian Text © D.V. Borodin, Yu.V. Osipov, V.V. Vasil’ev, 2016, published in Prikladnaya Fizika, 2016, No. 2, pp. 76–81.
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Borodin, D.V., Osipov, Y.V. & Vasil’ev, V.V. A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm. J. Commun. Technol. Electron. 62, 299–303 (2017). https://doi.org/10.1134/S1064226917030032
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DOI: https://doi.org/10.1134/S1064226917030032