Abstract
The effect of resistive switching in individual dislocations in memristor Ag/Ge/Si(001) structures is demonstrated experimentally using atomic force microscopy with a conducting probe. A hysteresis is found in the current–voltage characteristics of dislocations, which is typical of bipolar resistive switching related to the formation and destruction of an Ag filament in a Ge layer as a result of drift of Ag+ ions along the dislocation core.
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ACKNOWLEDGMENTS
AFM studies were carried out using the instrumental resources of the Center for Collective Use of the Physics of Solid-State Nanostructures Scientific and Educational Center of Lobachevsky National Research State University of Nizhny Novgorod.
Funding
This study was supported by the Russian Science Foundation (project no. 18-72-10061) in the part concerning the formation of Ge/Si heterostructures and the Russian Foundation for Basic Research (project no. 19-29-03026) in the part concerning the AFM investigations.
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Translated by A. Sin’kov
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Vorontsov, V.A., Antonov, D.A., Kruglov, A.V. et al. Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy. Tech. Phys. Lett. 47, 781–784 (2021). https://doi.org/10.1134/S1063785021080149
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DOI: https://doi.org/10.1134/S1063785021080149