Abstract
Ag/Ge/Si heterostructures with threading dislocations in Ge layer can exhibit resistive switching (RS) in two regimes: (i) bipolar and (ii) volatile unipolar. In both regimes, these structures possess stable states with the ratio of currents in the low-resistance state (LRS) and high-resistance state (HRS) within 1.5–2.7. The volatile unipolar switching can be determined by capturing charge carriers on deep levels related to misfit dislocations at the Ge/Si interface, whereas the bipolar switching is related to the drift of Ag+ ions via threading dislocations.
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This study was supported in part by the Russian Foundation for Basic Research, project no. 19-29-03026).
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Translated by P. Pozdeev
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Gorshkov, O.N., Shengurov, V.G., Denisov, S.A. et al. Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures. Tech. Phys. Lett. 46, 91–93 (2020). https://doi.org/10.1134/S106378502001023X
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DOI: https://doi.org/10.1134/S106378502001023X