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The Role of Coulomb Interaction in the Defect Model of a Schottky Barrier

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Abstract

A model of a Schottky barrier is proposed in which dimers consisting of semiconductor defects and nearest metal atoms are present at the interface. Short-range Coulomb repulsion is included between defect electrons and metal atom electrons. Analytical expressions for the occupation numbers of atoms and defects and the Schottky barrier height are obtained.

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REFERENCES

  1. F. Bechstedt and R. Enderlein, Semiconductor Surfaces and Interfaces (Akademie, Berlin 1988), Chap. 4.

    Google Scholar 

  2. W. Mönch, Rep. Prog. Phys. 53, 221 (1990). https://doi.org/10.1088/0034-4885/53/3/001

    Article  ADS  Google Scholar 

  3. R. T. Tung, Appl. Phys. Rev. 1, 011304 (2014). https://doi.org/10.1063/1.4858400

    Article  ADS  Google Scholar 

  4. I. V. Antonova, Semiconductors 50, 66 (2016). https://doi.org/10.1134/S106378261601005X0

    Article  ADS  Google Scholar 

  5. I. Shtepliuk, J. Eriksson, V. Khranovskyy, T. Iakimov, A. I. Spetz, and R. Yakimova, Beilstein J. Nanotechnol. 7, 1800 (2016). https://doi.org/10.3762/bjnano.7.173

    Article  Google Scholar 

  6. H.-M. Chang, K.-L. Fan, A. Charnas, P. D. Ye, Y.-M. Lin, C.-I. Wu, and C.-H. Wu, J. Phys. D: Appl. Phys. 51, 135306 (2018). https://doi.org/10.1088/1361-6463/aab063

    Article  ADS  Google Scholar 

  7. G.-S. Kim, S.-H. Kim, J. Park, K. H. Han, J. Kim, and H.-Y. Yu, ACS Nano 12, 6292 (2018). https://doi.org/10.1021/acsnano.8b03331

    Article  Google Scholar 

  8. S. Wang, J.-P. Chou, C. Ren, H. Tian, J. Yu, C. Sun, Y. Xu, and M. Sun, Sci. Rep. 9, 5208 (2019). https://doi.org/10.1039/C9CP07009E

    Article  ADS  Google Scholar 

  9. S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov, Semiconductors 35, 1375 (2001). https://doi.org/10.1134/1.1427974

    Article  ADS  Google Scholar 

  10. S. Yu. Davydov, Phys. Solid State 46, 2207 (2004). https://doi.org/10.1134/1.1841381

    Article  ADS  Google Scholar 

  11. R. Ludeke, G. Jezequel, and A. Taleb-Ibrahimi, Phys. Rev. Lett. 61, 601 (1988). https://doi.org/10.1103/PhysRevLett.61.601

    Article  ADS  Google Scholar 

  12. R. Ludeke, Phys. Rev. B 40, 1947 (1989). https://doi.org/10.1103/PhysRevB.40.1947

    Article  ADS  Google Scholar 

  13. S. Yu. Davydov and S. V. Troshin, Phys. Solid State 49, 759 (2007). https://doi.org/10.1134/S1063783407080318

    Article  ADS  Google Scholar 

  14. S. Yu. Davydov, A. A. Lebedev, and O. V. Posrednik, Elementary Introduction to the Theory of Nanosystems (Lan’, St. Petersburg, 2014), Chaps. 8, 9 [in Russian]. https://lanbook.fdo.tusur.ru/book/44757?category=43738.

  15. A. A. Lebedev, Semiconductors 33, 707 (1999). https://doi.org/10.1134/1.1187764

    Article  ADS  Google Scholar 

  16. A. I. Gusev, Phys. Usp. 57, 839 (2014). https://doi.org/10.3367/UFNe.0184.201409a.0905

    Article  ADS  Google Scholar 

  17. J. K. Freericks and V. Zlatic, Rev. Mod. Phys. 75, 1333 (2003). https://doi.org/10.1103/RevModPhys.75.1333

    Article  ADS  Google Scholar 

  18. V. Yu. Irkhin and Yu. P. Irkhin, Electronic Structure, Physical Properties and Correlation Effects in d- and f-Metals (UrO RAN, Ekaterinburg, 2004), Chap. 2 [in Russian]. https://www.rfbr.ru/rffi/ru/books/o_71426.

    Google Scholar 

  19. Physical Values, The Handbook, Ed. by I. S. Grigor’ev and E. Z. Meilikhov (Energoatomizdat, Moscow, 1991) [in Russian].

    Google Scholar 

  20. Ch. Kittel, Quantum Theory of Solids (Wiley, New York, 1963), Chap. 18. https://ikfia.ysn.ru/wp-content/uploads/2018/01/Kittel1967ru.pdf.

    MATH  Google Scholar 

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. Yu. Davydov

  2. St. Petersburg State Electrotechnical University “LETI, 199034, St. Petersburg, Russia

    O. V. Posrednik

Authors
  1. S. Yu. Davydov
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  2. O. V. Posrednik
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Correspondence to S. Yu. Davydov.

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Translated by A. Sin’kov

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Davydov, S.Y., Posrednik, O.V. The Role of Coulomb Interaction in the Defect Model of a Schottky Barrier. Tech. Phys. Lett. 47, 234–236 (2021). https://doi.org/10.1134/S1063785021030081

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  • DOI: https://doi.org/10.1134/S1063785021030081

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