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Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures

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Abstract

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russia

    D. Yu. Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov & K. S. Zhuravlev

  2. Novosibirsk State Technical University, Novosibirsk, 630073, Russia

    D. Yu. Protasov

  3. Tomsk State University of Control Systems and Radioelectronics, Tomsk, 634050, Russia

    E. V. Erofeev

  4. Novosibirsk State University, Novosibirsk, 630090, Russia

    K. S. Zhuravlev

Authors
  1. D. Yu. Protasov
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  2. D. V. Gulyaev
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  3. A. K. Bakarov
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  4. A. I. Toropov
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  5. E. V. Erofeev
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  6. K. S. Zhuravlev
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Corresponding author

Correspondence to D. Yu. Protasov.

Additional information

Original Russian Text © D.Yu. Protasov, D.V. Gulyaev, A.K. Bakarov, A.I. Toropov, E.V. Erofeev, K.S. Zhuravlev, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 6, pp. 77–84.

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Protasov, D.Y., Gulyaev, D.V., Bakarov, A.K. et al. Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures. Tech. Phys. Lett. 44, 260–262 (2018). https://doi.org/10.1134/S1063785018030240

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  • DOI: https://doi.org/10.1134/S1063785018030240

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